IRG7CH73K10EF Allicdata Electronics
Allicdata Part #:

IRG7CH73K10EF-ND

Manufacturer Part#:

IRG7CH73K10EF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V ULTRA FAST DIE
More Detail: IGBT 1200V Surface Mount Die
DataSheet: IRG7CH73K10EF datasheetIRG7CH73K10EF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 1200V
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
Switching Energy: --
Input Type: Standard
Gate Charge: 360nC
Td (on/off) @ 25°C: 63ns/267ns
Test Condition: 600V, 75A, 4.7 Ohm, 15V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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The IRG7CH73K10EF is a single Insulated Gate Bipolar Transistor (IGBT) that is configured in an innovative module. It is a high power transistor that offers a broad range of operating voltages, currents and switching frequencies. With its superior temperature resistance, high current ratings and excellent operating characteristics, the IRG7CH73K10EF is the ideal choice for a wide array of applications

The IRG7CH73K10EF is available in standard and specialized versions. The standard version is designed to provide reliable and safe operation, while the specialized version is designed for higher levels of performance and functionality. Both versions feature a semiconductor die bonded to a copper substrate, a housing, and a heat sink. The device is made up of two terminals and includes an integrated gate drive circuit. The integrated circuit includes a power MOSFET transistor and two current gain stages.

The IRG7CH73K10EF is used in many applications including motor control, high voltage power supplies, lift controllers, drive controllers and rectifiers. The integrated gate drive circuit provides a high frequency, switch-mode operation that is suitable for a variety of applications and is also suited for low to medium power switching applications.

The working principle of the IRG7CH73K10EF is based on the principle of bipolar switching. The gate voltage is used to control the conduction and current flow of multiple collector-emitter paths. This allows the device to be used in applications that require frequent on/off switching at relatively low frequencies. The operating temperature range of the device is between -55°C and +150°C, and the operating voltage range is between 9V and 30V.

The device is robust and can handle high surge and short circuit currents. In addition, it is designed to provide superior switching speed, power efficiency, high voltage ratings and low power dissipation. It is also capable of performing in low and high temperatures and providing reliable performance for long periods.

The IRG7CH73K10EF is an ideal solution for applications where space and cost are of prime concern. The high switching capability and robust operating characteristics make it a cost-effective choice, while the low cost and small size make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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