IRG7CH75UEF-R

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRG7CH75UEF-R is a single IGBT (Insulated Gate Bipolar Transistor) from Infineon. IGBTs have become increasingly popular with engineers in the field of consumer electronics, automotive and industrial applications. In this article, we will go through the advantages that IGBTs possess and the application field and working principle of the IRG7CH75UEF-R in detail.

IGBTs are switching semiconductor devices which combine the best features of both bipolar junction transistors and field effect transistors. This results in a power switching device with low conduction and switching losses. The low loss nature of IGBTs makes them the device of choice in applications where efficiency is paramount, like electric motor drive systems, UPSs and solar inverters. Additionally, the low switching losses of IGBTs can provide faster switching frequencies and higher frequencies than would otherwise be achievable.

The IRG7CH75UEF-R is specifically designed for high-speed switching applications such as UPS and industrial motor drives. This device has a wide voltage ranging from 1600V to 1800V with a maximum current rating of 75A, which makes it perfect for high power applications. The low conduction and switching losses of this device makes it a highly efficient device and with its significant Gate Charge, it provides tailorable turn-off times for improved system performance.

To further maximize efficiency and performance, designers can employ the built-in Temperature Dependent Gate Driver (TDGD) circuit. The TDGD senses the temperature on the device and automatically adjusts the gate voltage to compensate for the temperature changes. This makes the device highly efficient and reliable in applications which require high switching performance.

From a working principle point of view, the IRG7CH75UEF-R is a voltage-controlled device and consists of a two-layer, three-terminal design. This is achieved by using an insulated layer between the gate and emitter terminals, which provides the insulation needed to protect the gate terminal from the higher voltage between the emitter and collector terminals. This insulation allows the gate voltage to be applied independently of the emitter voltage, enabling the device to be turned on and off.

When the gate voltage is applied, electrons are emitted from the gate and attracted to the collector terminal. This causes the current to flow from the collector to the emitter, allowing charge carriers to move from the emitter region and into the collector. This flow of charge carriers is known as an electric current and is what powers the device.

When the gate voltage is increased, more electrons are emitted from the gate, causing the electric current to increase. Conversely, when the gate voltage is reduced, the electric current decreases. This allows for precise control over the electric current, making the IRG7CH75UEF-R a highly efficient and reliable power-switching device.

In conclusion, the IRG7CH75UEF-R is a single IGBT from Infineon specifically designed for high-speed switching applications such as UPS and industrial motor drives. It has a wide voltage ranging from 1600V to 1800V with a maximum current rating of 75A, which makes it perfect for high power applications. Additionally, the low conduction and switching losses of this device makes it a highly efficient device and with its significant Gate Charge, it provides tailorable turn-off times for improved system performance. With its efficient performance, reliability and precise control over electric current, the IRG7CH75UEF-R is an excellent choice for high-power applications.

The specific data is subject to PDF, and the above content is for reference