Series:	*
Part Status:	Obsolete

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to IRG7PH35U-EPBF

The IRG7PH35U-EPBF is a high performance, 600V fast 1700VCR MOS Injection molded package (IMP) insulated gate bipolar transistor (IGBT) module. It is designed to excel in high frequency switching applications, such as medium and high watt switching power supplies, induction heaters, SMPS, induction motors, welding machines and lamps. With lower power losses and faster switching frequencies, it enhances energy efficiency and reduces size and cost in these applications.

Application Fields

IRG7PH35U-EPBF is designed for high frequency switching applications, such as medium and high watt switching power supplies (SMPS), induction heaters, induction motors, welding machines and lamps. It can be used in various types of switching applications, including commercial and industrial power converters and motor controllers.The IRG7PH35U-EPBF is also suitable for adjustable frequency AC motor control applications and PWM (pulse-width modulation) systems, such as auto-start, fan control and energy saving applications.

Working Principle

An IGBT, or insulated gate bipolar transistor, is a type of power semiconductor device. It combines the best features of both a power MOSFET and a bipolar transistor and consists of four main elements: a base, a gate, a drain, and a collector, which are connected in a “base-gate-drain-collector” structure. This architecture allows the IGBT to be opened and closed rapidly, depending on the drive applied to the gate. IGBTs are mainly used for switching applications, such as for powering motors, heating elements, and lighting. The IRG7PH35U-EPBF IGBT can operate with a reverse blocking voltage of up to 600V. The IRG7PH35U-EPBF IGBT differs from other types of IGBTs in that its IGBT module is injection-molded, eliminating the need for an elaborate package. This improves the reliability of the device and increases its ability to handle high-frequency switching. The IRG7PH35U-EPBF IGBT also has a low overall conduction and switching losses due to its low gate charge and low capacitance. These features combined with its high frequency operation make the IRG7PH35U-EPBF IGBT an ideal choice for a wide range of applications.

Conclusion

The IRG7PH35U-EPBF IGBT is a high performance, 600V fast 1700VCR MOS injection molded package (IMP) insulated gate bipolar transistor (IGBT) module. It is designed to excel in high frequency switching applications, such as medium and high watt switching power supplies, induction heaters, SMPS, induction motors, welding machines and lamps. The IRG7PH35U-EPBF IGBT differs from other types of IGBTs in that its IGBT module is injection-molded, eliminating the need for an elaborate package. This improves the reliability of the device and increases its ability to handle high-frequency switching. With lower power losses and faster switching frequencies, it enhances energy efficiency and reduces size and cost in these applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description