IRG7CH73K10EF-R Allicdata Electronics
Allicdata Part #:

IRG7CH73K10EF-R-ND

Manufacturer Part#:

IRG7CH73K10EF-R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V ULTRA FAST DIE
More Detail: IGBT 1200V Surface Mount Die
DataSheet: IRG7CH73K10EF-R datasheetIRG7CH73K10EF-R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 1200V
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
Switching Energy: --
Input Type: Standard
Gate Charge: 420nC
Td (on/off) @ 25°C: 105ns/45ns
Test Condition: 600V, 75A, 5 Ohm, 15V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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The IRG7CH73K10EF-R is a single IGBT in a module package. It has various application areas that make it an advantageous choice for different purposes. Its working principle is based on a unique feature that makes it an efficient device. This article will provide a detailed overview of the application fields and working principle of the IRG7CH73K10EF-R.

Application Fields

The IRG7CH73K10EF-R can be used in a variety of applications, such as motor control, automotive, welding, inverters, UPS systems, solar inverters, drives, and industrial motor control. The device comes with a built-in short circuit protection, which makes it perfect for applications that require high current integrity and/or quick action triggering. It can handle extended high temperature up to 175°C, which makes it great for high-temperature applications. Due to its low forward voltage, the IRG7CH73K10EF-R can be used in low-power applications and its high current capability makes it great for high-powered applications.

Working Principle

The IRG7CH73K10EF-R is an IGBT that has a unique working principle. It combines an insulated gate bipolar transistor and an N-type MOSFET in a single package. Its MOSFET structure allows for easy control of the current by applying a voltage to its gate. The insulated gate bipolar transistor provides a low saturation voltage, meaning it behaves like a switch when it is used to control power. This helps to save power and decrease the operating temperature of the device. The low on-state resistance of the IGBT reduces power losses and the low gate drive voltage improves the design efficiency.

The IRG7CH73K10EF-R is a highly efficient device that offers superior performance for motor control, automotive applications, welding, inverters, UPS systems, solar inverters, drives and industrial motor control. Its unique operational principle, low on-state resistance, low saturation voltage and high current capability make it a great choice for high-temperature applications. Thanks to its built-in short circuit protection, it is perfect for high current applications.

The specific data is subject to PDF, and the above content is for reference

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