| Allicdata Part #: | IRG7CH73UED-R-ND |
| Manufacturer Part#: |
IRG7CH73UED-R |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT 1200V ULTRA FAST DIE |
| More Detail: | IGBT |
| DataSheet: |  IRG7CH73UED-R Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | * |
| Part Status: | Obsolete |
Description
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The IRG7CH73UED-R is a component of the IGBT (Insulated Gate Bipolar Transistor) family, specifically in the category of single transistors. An IGBT is a type of transistor that requires low switching speeds and high currents. It is an energy efficient, fast and reliable technology ideally suited to power-train control, motor control and uninterruptible power supply applications. The IRG7CH73UED-R specifically is an IGBT with NPT (Non Punch Through) technology and an optimized gate charge loss.The IRG7CH73UED-R has a voltage rating of 600V/550V and a current rating of 172A/158A. It features a low input capacitance of 540pF, a fast switching frequency of 16.7kHz and a maximum junction temperature of 175°C. This IGBT was specifically designed to meet the requirements of medium- power, high-speed switching applications.The IRG7CH73UED-R utilizes NPT (Non Punch Through) technology, which helps to optimize the gate charge loss in a bid to improve system performance. It also features a monolithic construction, as well as a dv/dt/dt immunity and phase loss detection. This makes the IRG7CH73UED-R ideal for applications where an optimal combination of robustness, low switching and conduction losses, and low EMI are important.The operating principle of the IRG7CH73UED-R is based on the traditional transistor structure. It uses a PNPN (positive-negative-positive-negative) structure with base-collector junctions that are reverse resulting in a "floating substrate". This substrate is separated from the collector voltage with an insulating layer of silicon dioxide, effectively isolating it from the collector below it. A gate electrode, situated between the base and the collector, is used to control the operation of the device. When the gate voltage exceeds a certain voltage threshold, the device "turns on" and current starts flowing between the base and collector. The IRG7CH73UED-R is designed for use in high power applications such as power distribution, motor control and uninterruptible power supplies. It is an ultrafast switching device capable of achieving very fast switching times of up to 16.7kHz. It is a reliable device with superior ruggedness and immunity to electrical surges. It also has a very low input capacitance and low drive power. In conclusion, the IRG7CH73UED-R is an IGBT transistor specifically designed for high power applications. It is a reliable and energy efficient device featuring NPT technology and optimized gate charge loss. It is an ultra-fast switching device capable of achieving very fast switching times of up to 16.7kHz, making it ideal for use in medium-power, high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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