IRG7CH81K10EF Allicdata Electronics
Allicdata Part #:

IRG7CH81K10EF-ND

Manufacturer Part#:

IRG7CH81K10EF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V ULTRA FAST DIE
More Detail: IGBT
DataSheet: IRG7CH81K10EF datasheetIRG7CH81K10EF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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IRG7CH81K10EF is a high-speed insulated-gate bipolar transistor (IGBT) module (IGBT) manufactured by Fuji Electric. It features a large current carrying capacity up to a maximum of 1000A and operating frequency up to 10KHz. As such, it is a very powerful module and has a wide range of potential applications.

The IRG7CH81K10EF is a single IGBT module, in the sense that it only contains one IGBT. An IGBT is a type of power semiconductor device, which is a combination of a bipolar transistor and a metal–oxide–semiconductor field-effect transistor(MOSFET). This allows the device to combine the best of both types of transistor technologies; IGBTs can handle both high power and high frequency. An individual IGBT consists of two regions separated by a thin barrier. The regions act similarly to a PN junction or diode, which is known as the insulation layer.

The IRG7CH81K10EF has a variety of potential applications, as it can switch large currents and handle high frequencies. The device is particularly well-suited for motor drive applications, such as those found in electric vehicles and other power switching devices. It is also used in industrial automation and control applications, as well as energy-related applications such as adjustable-voltage converters and power conversion systems. Additionally, due to its high frequency rating, the IRG7CH81K10EF is also suitable for use in high-frequency power supply circuits.

The working principle of an IGBT module is quite similar to that of a MOSFET power switch. When the gate of the transistor is activated, a layer of electrons within the device is forced to move from the drain to the source of the transistor. This effectively creates a current path, known as a drift zone, between the two terminals. As a result, a large amount of electrical current can now flow between the two terminals. This is how the IRG7CH81K10EF is able to control large currents.

Due to its impressive power handling capacity and high frequency rating, the IRG7CH81K10EF is a very capable and versatile IGBT module. This makes it ideal for a wide range of power-related applications, from EV motor drives to high-frequency power supply circuits. With its impressive current carrying capacity and high frequency capabilities, the IRG7CH81K10EF is sure to be a valuable asset to many power-dependent projects.

The specific data is subject to PDF, and the above content is for reference

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