IRGPS66160DPBF Allicdata Electronics

IRGPS66160DPBF Discrete Semiconductor Products

Allicdata Part #:

IRGPS66160DPBF-ND

Manufacturer Part#:

IRGPS66160DPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 160A TO247
More Detail: IGBT 600V 240A 750W Through Hole SUPER-247 (TO-27...
DataSheet: IRGPS66160DPBF datasheetIRGPS66160DPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Part Status: Last Time Buy
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 240A
Current - Collector Pulsed (Icm): 360A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A
Power - Max: 750W
Switching Energy: 4.47mJ (on), 3.43mJ (off)
Input Type: Standard
Gate Charge: 220nC
Td (on/off) @ 25°C: 80ns/190ns
Test Condition: 400V, 120A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): 95ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Supplier Device Package: SUPER-247 (TO-274AA)
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Description

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IRGPS66160DPBF is an industrial grade Insulated Gate Bipolar Transistor (IGBT) that is designed to operate in a wide range of applications. It is designed to reduce the switching losses and increase the power dissipation. IGBTs are especially suitable for high voltage and high power applications. This IGBT also comes with a low current consumption and is capable of stable operation in a wide range of temperatures. It has an impressive maximum current carrying capacity of 1600A and can handle voltages of up to 600 V. Thanks to its robust design, the IRGPS66160DPBF is widely used in power conversion and motor control applications.

This transistor is composed of two parts: an insulated gate and a bipolar transistor. The insulated gate is responsible for controlling the current flow between the input and output of the device. When an electrical signal is sent to the gate, it creates an electric field that controls the flow of current. The bipolar transistor is responsible for providing higher voltage and current output. The internal connections between the insulated gate and the bipolar transistor are responsible for the transistor to work as an IGBT.

The working principle of this IGBT device is quite simple. In a nutshell, the device acts as a switch which can be used to control the flow of current. When an electrical signal is applied to the insulated gate, an electric field is created that helps to control the current. On the other hand, the electrical field created by the positive and negative terminals helps to further reduce the current leakage and increase the power dissipation.

The IRGPS66160DPBF is mostly employed in industrial applications. It can be used in a wide range of power conversion and motor control systems that require high power ratings and high temperatures. This IGBT is also suitable for applications such as solar inverters, UPS systems, and AC drives. Furthermore, it is also highly reliable since it can handle current and voltage ratings that are considerably higher than those of standard IGBTs.

Overall, the IRGPS66160DPBF is an industrial grade Insulated Gate Bipolar Transistor (IGBT) which is ideal for a wide range of applications. It has excellent current and voltage ratings, can handle high temperatures and is highly reliable. Additionally, it has an impressive maximum current carrying capacity of 1600A and can handle voltages of up to 600 V. Thanks to its robust design and operation, it is widely used in power conversion and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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