IRGP4050 Allicdata Electronics
Allicdata Part #:

IRGP4050-ND

Manufacturer Part#:

IRGP4050

Price: $ 7.83
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 250V 104A 330W TO247AC
More Detail: IGBT 250V 104A 330W Through Hole TO-247AC
DataSheet: IRGP4050 datasheetIRGP4050 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
25 +: $ 7.11368
Stock 1000Can Ship Immediately
$ 7.83
Specifications
Power - Max: 330W
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 180V, 30A, 5 Ohm, 15V
Td (on/off) @ 25°C: 37ns/120ns
Gate Charge: 230nC
Input Type: Standard
Switching Energy: 45µJ (on), 125µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Pulsed (Icm): 208A
Current - Collector (Ic) (Max): 104A
Voltage - Collector Emitter Breakdown (Max): 250V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The IRGP4050 is a single IGBT device with the main purpose of providing increased power density and efficiency in any power-hungry application. It can be used in a range of applications from low voltage AC motor control, automotive \'drag\' and street applications, to high power industrial motor and DC drives. With its low conduction losses, wide safe operating area (SOA) and snappy carrier lifetime, it has become the go-to device in many power electronics applications.

The IRGP4050 device is made up of a bipolar N-channel insulated-gate field-effect transistor (IGFET or IGBT) and a reverse-parallel diode. This device provides an improved design over the traditional IGBT along with other advantages like superior switching characteristics, higher current handling capability and temperature stability. The IGBT has a lower threshold voltage and therefore uses less power to switch, which decreases conduction losses and increases efficiency. The reverse-parallel diode absorbs high currents, reducing switching noise and potentially damaging voltage peaks.

The IRGP4050 IGBT has an MOS gate structure, as opposed to a simple gate structure on traditional IGBTs. This allows for higher current capability and better on-state voltage-holding capability. The MOS gate structure also gives the device a much faster switching time when compared to traditional IGBTs. By increasing the speed of switching, the switching losses are reduced and more power is available for the load.

The IRGP4050 also has a higher SOA, which is a measure of the device\'s ability to safely handle current and voltage. This allows for higher load currents and larger load voltages in certain applications. The higher SOA also results in lower switching losses. All of these features result in a device that is more efficient and reliable, while providing significant cost savings.

The IRGP4050 IGBT is a versatile and reliable device that is suitable for many high-power applications. It is capable of handling high power at low loss, and its MOS gate allows for faster switching and higher SOA. The combination of high performance, low conduction losses, and cost-effectiveness makes the IRGP4050 an attractive choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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