IRGP4790D-EPBF Allicdata Electronics

IRGP4790D-EPBF Discrete Semiconductor Products

Allicdata Part #:

IRGP4790D-EPBF-ND

Manufacturer Part#:

IRGP4790D-EPBF

Price: $ 5.74
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 650V TO-247
More Detail: IGBT 650V 140A 455W Through Hole TO-247AD
DataSheet: IRGP4790D-EPBF datasheetIRGP4790D-EPBF Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
400 +: $ 5.21577
Stock 1000Can Ship Immediately
$ 5.74
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Last Time Buy
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: 455W
Switching Energy: 2.5mJ (on), 2.2mJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 400V, 75A, 10 Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Description

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The IRGP4790D-EPBF is a field-stop IGBT with an integrated Schottky diode. It is an N-channel MOSFET transistor designed to provide high output current, high switching speed and low switching losses. This device is an ideal choice for applications such as motor control, frequency converters and DC-DC converters.

The IRGP4790D-EPBF transistor is made up of a number of components, including a gate-emitter insulation layer, a gate-source insulation layer, a P-channel sub-micron MOSFET, a body-gate insulation layer, and a drain Sub-micron MOSFET. These components all play a role in the device\'s performance, but the most important is the gate-source insulation layer, which helps to reduce the risk of gate-emitter charge slipping. In addition, the device also includes a spike avoidance diode (SAD) to protect the device from high-frequency ringing.

The IRGP4790D-EPBF transistor is designed with a solitary collector and emitter and has a voltage rating of 600V. It can handle currents of up to 350A and features a forward-biased body diode. When connected to the circuit, the device can provide protection from increased EMF voltages, thus preventing equipment damage. In addition to its low overall conduction loss, the device is also very efficient and can provide a high power density.

As a result of its superior performance, the IRGP4790D-EPBF transistor has found a variety of applications. It is ideal for motor control applications, as its high switching speed, low switching losses and high output current help to make motor control more efficient. It is also an ideal choice for frequency converters, as it can accurately control the switching frequency and reduce interference. Finally, it is often used in DC-DC converters, as its low conduction loss and high power density help to reduce overall costs.

In conclusion, the IRGP4790D-EPBF transistor is an excellent choice for applications requiring high output current, high switching speed and low switching losses. It is a field-stop IGBT with an integrated Schottky diode, and its components make it an ideal choice for motor control, frequency converters and DC-DC converters. The device is also very efficient and can provide a high power density, making it a great choice for applications that require high performance.

The specific data is subject to PDF, and the above content is for reference

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