IRGPF50F Allicdata Electronics
Allicdata Part #:

IRGPF50F-ND

Manufacturer Part#:

IRGPF50F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT FAST 900V 51A TO-247AC
More Detail: IGBT 900V 51A 200W Through Hole TO-247AC
DataSheet: IRGPF50F datasheetIRGPF50F Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 51A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Power - Max: 200W
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Description

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Introduction to IRGPF50F Application Field and Working Principle

IRGPF50F is a type of single IGBT ( Insulated Gate Bipolar Transistor ). This type of IGBT is a semiconductor device with a combination of attributes of both a MOSFET (metal-oxide-semiconductor FET) and a BJT (Bipolar Junction Transistor). A single IGBT is advantageous because it can handle very large amounts of power, in an efficient and cost effective manner. It is popular in applications like motor drives, inverters, switched-mode power supplies, automotive and many other forms of power conversion.

The Mechanism of Operation

The operation of the IRGPF50F is based on three simple components, the Collector, the Emitter, and the Gate. The Collector and the Emitter are connected in parallel to form the IGBT\'s conducting path, known as the Emitter-Collector path. The Gate, which is connected to the Base, provides the control over the switching of the Emitter-Collector path. When a voltage is applied to the gate, the internal electric field causes charge carriers ( electrons or holes ) to flow between the Collector and the Emitter, thereby allowing the current to flow.

The charge carriers, which are the electrons and the holes, move from the Base to the Emitter through the Gate. This creates a large electric field, which attracts the charge carriers from the Base to the Emitter. The large electric field builds until the Emitter-Collector path is turned on. This is known as the turn-on action of the IGBT. When the gate drive voltage is reduced, the electric field reduces, thereby allowing the electric field to dissipate and allowing the charge carriers to move from the collector to the emitter. This is known as the turn-off action of the IGBT.

Application Field

The IRGPF50F is a versatile product and is used in a wide range of applications. It can be used in motors drives, inverters, power electronics, electronic power supply modules, automotive, HVAC, energy management, electric vehicles, and many other forms of power conversion. The IRGPF50F is capable of handling extremely large amounts of power, providing efficient, reliable, and cost-effective solutions.

Moreover, due to the high efficiency and low conduction losses, the IRGPF50F is a popular choice for motor drives, switching power converters, magnetic compressing machines and multifunctional electric machines. Additionally, the IRGPF50F can be used in high frequency applications such as digital radio broadcast, optical communication, radio communication and satellite communication.

Conclusion

The IRGPF50F is a single IGBT with many application fields. It is used in a variety of applications due to its high efficiency, low conduction losses and its ability to handle large amounts of power. Subsequently, the IRGPF50F is an important component in a wide variety of applications and is well suited for power conversion and motor drive applications.

The specific data is subject to PDF, and the above content is for reference

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