Allicdata Part #: | IRGP6690DPBF-ND |
Manufacturer Part#: |
IRGP6690DPBF |
Price: | $ 5.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 140A 483W TO247AC |
More Detail: | IGBT 600V 140A 483W Through Hole TO-247AC |
DataSheet: | IRGP6690DPBF Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
25 +: | $ 5.11837 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 140A |
Current - Collector Pulsed (Icm): | 225A |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 75A |
Power - Max: | 483W |
Switching Energy: | 3.1mJ (on), 2.8mJ (off) |
Input Type: | Standard |
Gate Charge: | 140nC |
Td (on/off) @ 25°C: | 85ns/222ns |
Test Condition: | 400V, 75A, 10 Ohm, 15V |
Reverse Recovery Time (trr): | 90ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
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IRGP6690DPBF is an isolated IGBT from Vishay with a low operating voltage, high gain and low on-impedance. It combines the advantages of a fast-switching Insulated Gate Bipolar Transistor (IGBT) with a reverse diode in one self-contained package. The IGBT has superior switching characteristics to standard MOSFETs and is suitable for a wide range of power applications such as motor control, power conversion and switching.
Application Field
The IRGP6690DPBF is mainly used in power applications where high power, low voltage and low current are required. It is ideal for low-power motor drive applications, power supply switching and power factor correction. It is also suitable for use in automotive and consumer electronics for controlling high inductive loads. The IRGP6690DPBF provides rugged performance in high-temperature, high-frequency power control applications.
Working Principle
The IRGP6690DPBF is an isolated power transistor with a built-in reverse diode. It works on the same principle as other isolated gate bipolar transistors (IGBTs). The IGBT is based on the interface of a thin vertical layer of metal oxide semiconductor (MOS) and an epitaxial layer of n-type material. This layer uses a gate voltage to control the conductivity of electrons between the emitter and the collector. When the gate voltage is switched on, the current is allowed to flow through the device. When it is switched off, the current is restricted.
On the other hand, the reverse diode is a separately isolated p-type emitter-base part, which will conduct current when the MOS side is switched off. When the reverse diode is forward-biased, it is “on”, and the voltage across it is negative, meaning that the current can flow from the reverse diode\'s base (emitter) to its collector (cathode). When it is reverse-biased, it is “off”, meaning that current cannot flow through it. The reverse diode acts as a protection device for the IGBT as it prevents current from flowing through it when the IGBT is switched off.
The IRGP6690DPBF has low losses and provides superior switching performance. It is capable of operating at voltages up to 1200V and current up to 90A. It is suitable for high-current, low-voltage applications such as motor drive, power conversion, and power factor correction.
In addition, the IRGP6690DPBF provides short circuit protection, over temperature protection, current sense monitor and shutdown, and soft-switching control. Its superior switching performance and low on-resistance make it an ideal choice for power applications.
The IRGP6690DPBF is a robust and reliable device that offers improved efficiency, power density, and cost savings for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IRGPC40UD2 | Infineon Tec... | -- | 1000 | IGBT W/DIODE 600V 40A TO-... |
IRGPF50F | Infineon Tec... | -- | 1000 | IGBT FAST 900V 51A TO-247... |
IRGPC50F | Infineon Tec... | -- | 1000 | IGBT FAST 600V 70A TO-247... |
IRGPC50UD2 | Infineon Tec... | 0.0 $ | 1000 | IGBT W/DIODE 600V 55A TO-... |
IRGPC50FD2 | Infineon Tec... | 0.0 $ | 1000 | IGBT W/DIODE 600V 70A TO-... |
IRGPC40FD2 | Infineon Tec... | 0.0 $ | 1000 | IGBT W/DIODE 600V 49A TO-... |
IRGPC30FD2 | Infineon Tec... | 0.0 $ | 1000 | IGBT W/DIODE 600V 31A TO-... |
IRGPH50F | Infineon Tec... | 0.0 $ | 1000 | IGBT FAST 1200V 45A TO-24... |
IRGPH40F | Infineon Tec... | 0.0 $ | 1000 | IGBT FAST 1200V 29A TO-24... |
IRGPF40F | Infineon Tec... | 0.0 $ | 1000 | IGBT FAST 900V 31A TO-247... |
IRGPC50U | Infineon Tec... | -- | 1000 | IGBT UFAST 600V 55A TO-24... |
IRGPC40U | Infineon Tec... | -- | 1000 | IGBT UFAST 600V 40A TO-24... |
IRGPC40S | Infineon Tec... | 0.0 $ | 1000 | IGBT STD 600V 50A TO-247A... |
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