IRGP4063PBF

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The IRGP4063PBF is a 65 V N-Channel UltraFAST® IGBT designed with a dv/dt rated structure featuring negative temperature coefficient of saturation voltage (VCE(sat)). This IGBT combines the simple gate-drive characteristics of theSTD80NF06LS with the higher commutation ruggedness andcurrent-handling capabilities of the PowerFLAT® 5x6 package. This IGBT module is capable of handling large current pulses, thus making it ideal for use in applications ranging from AC inverter to induction cooking and UPS.

The features that make the IRGP4063PBF so attractive are its low turnoff losses, high voltage rating, and improved electron mobility. This combination allows for high efficiency performance, which is critical for use in applications that require power conversion. Additionally, the low switching losses of the device ensure high efficiency operations. Furthermore, its neutral temperature coefficient of VCE(ac) improves the temperature stability of the device, meaning it will consistently offer optimal performance in temperatures ranging from -55°C to 150°C.

The IRGP4063PBF is typically used in high-current, high-frequency applications such as induction cooking, Uninterruptible Power Supplies (UPS), inverters, welding systems, and soft starters. The IRGP4063PBF is capable of switching high current and high power and is also capable of blocking 35V while in the "off" state.

The working principle of the IRGP4063PBF is based on the principles of resonance. The device switches between "on" and "off" states by inversely biasing the N-channel of the IGBT at a fixed frequency, typically in the kHz range. When the IGBT is in the "off" state, current is prevented from flowing across the device by the forward biasing of the N-channel and the blocking voltage(VCE(off)). During the "on" state, the current is allowed to flow by propogation delay, thus allowing the current to pass through the device.

The IRGP4063PBF module integrates a sense FET, anti-parallel diode, and bootstrap diode, all of which are required to properly control the operation of the IGBT. The bootstrap diode is used to bias the IGBT into the desired state, and for high-side driving devices, the bootstrap diode is required to ensure that sufficient voltage is applied to the IGBT gate for proper on-off switching. The sense FET and anti-parallel diode are used to control the gate current and to ensure proper protection levels from di/dt induced switching transients.

In applications where the gate waveform requires a low-side gate drive, isolation components may be used to isolate the low-side gate drive from the high-side. Additionally, the IRGP4063PBF can be used in applications that require a low-side switched device in order to provide electrical isolation and protect against voltages higher than the maximum VCE.

The IRGP4063PBF is a high-performance IGBT module suitable for use in high-frequency and high-current applications. The device combines low switching losses, a high voltage rating and a negative TCVCE(sat) for improved performance and thermal stability. With an integrated sense FET, anti-parallel diode, and a bootstrap diode, the IRGP4063PBF is an ideal choice for a variety of applications where switching power quickly, accurately and reliably is a must.

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