IRGPC40FD2 Allicdata Electronics
Allicdata Part #:

IRGPC40FD2-ND

Manufacturer Part#:

IRGPC40FD2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT W/DIODE 600V 49A TO-247AC
More Detail: IGBT 600V 49A 160W Through Hole TO-247AC
DataSheet: IRGPC40FD2 datasheetIRGPC40FD2 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 49A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
Power - Max: 160W
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Description

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An IRGPC40FD2 IGBT is a Single Isolated Gate Bipolar Transistor (IGBT) device. Often used as an inverter in motor control, IGBTs are used for power conversions in a wide range of applications. The IRGPC40FD2 is an IGBT specifically designed for efficient motor control.

Application Field

The IRGPC40FD2 is used in applications such as motor control, home appliances, industrial equipment, and renewable energy systems. This IGBT is particularly well-suited for use in motor control systems due to its high efficiency, low noise operation, and low cost. Additionally, it is capable of handling high-frequency switching and can be used in applications ranging from low voltage to high voltage.

Working Principle

The IRGPC40FD2 IGBT features a double-diffused MOS structure. This enables it to be used as both a bipolar switch and an insulated gate. It has a gate threshold voltage of 4.5V, making it well-suited for low voltage applications. The IGBT also features an ultra-low on-resistance, thus allowing for high-efficiency power conversion. When a voltage potential is applied to the gate of the device, it switches from being off to on, thus allowing for current to flow from the collector to the emitter. When the voltage potential is removed from the gate, the device switches off, thus blocking any current flow. This switching action can occur at high frequencies, allowing for efficient and clean power conversion.

Conclusion

The IRGPC40FD2 IGBT is a Single Isolated Gate Bipolar Transistor device. Used primarily in motor control applications, it features a double-diffused MOS structure and an ultra-low on-resistance, allowing for efficient and clean power conversion. With a gate threshold voltage of 4.5V, the device is well-suited for low voltage applications. Additionally, it can handle high-frequency switching and can be used in applications ranging from low voltage to high voltage.

The specific data is subject to PDF, and the above content is for reference

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