Allicdata Part #: | IRGP4263PBF-ND |
Manufacturer Part#: |
IRGP4263PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 90A 300W TO-247 |
More Detail: | IGBT 650V 90A 300W Through Hole TO-247AC |
DataSheet: | IRGP4263PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 1.7mJ (on), 1mJ (off) |
Supplier Device Package: | TO-247AC |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 400V, 48A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 70ns/140ns |
Gate Charge: | 150nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 300W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 48A |
Current - Collector Pulsed (Icm): | 192A |
Current - Collector (Ic) (Max): | 90A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRGP4263PBF transistor is one of the most common components of various electronic devices. This is because it not only performs the basic job of powering a device, but also provides a wide range of other functions. With its high-speed switching capability, it is especially popular in high-powered applications. This article will give an overview of the application field and working principle of the IRGP4263PBF transistor.
The IRGP4263PBF transistor is a low on-resistance transistor that is manufactured in an insulated gate bipolar transistor (IGBT). This type of transistor is manufactured by sandwiching together two layers of semiconductor material and coating them with an insulation layer. The insulation layer helps to keep the charge carriers, electrons and holes, apart so that they don’t interact and affect the transistor’s function. The thickness of the insulation layer is determined by the voltage rating of the transistor and it is typically a few microns thick.
The IRGP4263PBF transistor is most commonly used in power MOSFET applications such as power switching, inverters, and high-frequency transistors. It is also used in logic and memory circuits, as well as in industrial, light and audio applications. In addition, the operating temperature range of the IRGP4263PBF is typically 0-125 degrees C, making it an excellent choice for industrial applications.
The working principle of the IRGP4263PBF transistor is quite simple. It is essentially a three-terminal device that is used to switch high-power electrical signals. The three terminals are commonly known as the collector, base and emitter. In order to properly operate the transistor, the collector and emitter must be connected to a load, and the voltage applied to the base terminal must be greater than the emitter-collector voltage.
When the base voltage is at or above the emitter-collector voltage, the transistor switches on, allowing the electrons to pass through it. This flow of electrons is what causes the current to travel in the desired direction. When the transistor is switched off, the electrons are prevented from traveling through the transistor and the current is blocked.
In addition to the basic switching capabilities, the IRGP4263PBF transistor can provide protection for the circuit against over-currents, short-circuits, and voltage spikes. It can also improve the efficiency of the circuit, allowing it to work at higher frequencies and operate at lower temperatures. This is why the IRGP4263PBF transistor is so popular in a wide range of applications.
In conclusion, the IRGP4263PBF transistor is a versatile component that can be used in a variety of high-power applications. It is designed to operate in temperatures of up to 125 degrees C and is capable of controlling large currents. Its three-terminal design allows it to switch high-power electrical signals quickly and accurately while providing protection against over-currents and short-circuits. Therefore, it is an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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IRGPC50FD2 | Infineon Tec... | 0.0 $ | 1000 | IGBT W/DIODE 600V 70A TO-... |
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