IRGP4069-EPBF Allicdata Electronics
Allicdata Part #:

IRGP4069-EPBF-ND

Manufacturer Part#:

IRGP4069-EPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 76A 268W TO247
More Detail: IGBT Trench 600V 76A 268W Through Hole TO-247AD
DataSheet: IRGP4069-EPBF datasheetIRGP4069-EPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 390µJ (on), 632µJ (off)
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 400V, 35A, 10 Ohm, 15V
Td (on/off) @ 25°C: 46ns/105ns
Gate Charge: 104nC
Input Type: Standard
Series: --
Power - Max: 268W
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 35A
Current - Collector Pulsed (Icm): 105A
Current - Collector (Ic) (Max): 76A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Part Status: Obsolete
Packaging: Tube 
Description

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The IRGP4069-EPBF is a high-voltage, high-current and fast switching IGBT module from the Insulated-Gate Bipolar Transistor (IGBT) family. As a digital transistor, it serves as an efficient switch for controlling or switching an electric current or digital signal. It is a single transistor (usually N-type) with three terminals - the emitter, base, and collector. It is designed to have a high gain, and it can be used to control a wide range of applications requiring efficient and fast switching.

The IRGP4069-EPBF IGBT module is ideal for applications requiring a high-current, fast-switching solution with excellent thermal properties. This high-power IGBT is well suited for high-power motor drives, solid state relays and lighting applications. The IRGP4069-EPBF is designed to be used in a wide range of applications such as power converters, power amplifiers, motor drives, UPS systems, renewable energy systems and more.

In terms of its working principle, the IRGP4069-EPBF transistor is an electrically conductive device made of two or more regions that are separated by a region of insulation. The two regions can be N-type and P-type materials, and there are three terminals for controlling or switching the current or digital signal. In the IRGP4069-EPBF IGBT module, the current flows from the collector to the emitter when the base is activated with a low voltage signal.

The IRGP4069-EPBF transistor has several advantages over other IGBTs as it has a low on-resistance, low saturation voltage and fast switching times. The device also features a high-voltage operation with improved dv/dt capability. It also has an extremely low output capacitance which makes it suitable for high-frequency PWM applications. Furthermore, the IRGP4069-EPBF has a wide operating temperature range which make it suitable for operation in many industrial, commercial and domestic applications.

Overall, the IRGP4069-EPBF IGBT module is an efficient, fast-switching and reliable transistor suitable for many applications requiring the control of high voltage and current. The device has several advantages such as low on-resistance, low saturation voltage and fast switching times thanks to its powerful design. Furthermore, the IRGP4069-EPBF is an excellent choice for power converters, motor drives, UPS systems, renewable energy systems and more.

The specific data is subject to PDF, and the above content is for reference

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