IRLB3036GPBF

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	380W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	11210pF @ 50V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	140nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	2.4 mOhm @ 165A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	195A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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<h2>IRLB3036GPBF Application Field and Working Principle</h2>The International Rectifier IRLB3036GPBF is a MOSFET power transistor, designed to provide superior performance in a wide range of applications. The fourth generation low-voltage, low-RDS(on) MOSFETs, IRLB3036GPBF is optimized for energy efficiency and can be used to drive multiple load types including motors and other high power applications.This transistor is designed to provide enhanced power density while maintaining extremely low RDS(on) even at higher duty cycles. It offers superior performance in all power applications such as power switching, high frequency control, voltage scaling, and so on. The IRLB3036GPBF can be used in a wide range of applications, from wireless communications to automotive components and renewable energy.<h3>Working Principle</h3>The IRLB3036GPBF is a surface-mount power MOSFET from International Rectifier. It is a depletion-mode MOSFET that uses a modified vertical PN junction structure formed in the silicon gate. The MOSFET features a high-speed switching capability with a fast turn-on and fall time. One of its major advantages is its low on-state resistance, which ensures maximum energy efficiency.The supply voltage of the IRLB3036GPBF is typically 30V, with an operating temperature range of -55°C to +150°C. It may be used as a substitute for an N-Channel Enhancement mode MOSFET in low-noise applications.The IRLB3036GPBF operates in an on-state or a cut-off state. In the on-state, the voltage at the gate is larger than the threshold voltage of the device and the drain-source resistance is small. In the cut-off state, the voltage at the gate is smaller than the threshold voltage of the device and the drain-source resistance is very large.<h3>Applications</h3>The IRLB3036GPBF has a wide range of applications. It can be used in low-noise, high frequency control devices, voltage scaling circuits, motor control, and power switching applications.This MOSFET can be used to reduce power consumption. In many applications, power consumption can be reduced by driving this device with low-power levels. This transistor can also be used for high-efficiency switching applications in battery-powered devices as it has high current capacity.The device is commonly used in automotive components, wireless communications, and renewable energy. The IRLB3036GPBF is also used in consumer electronics and medical components.<h3>Conclusion</h3>The IRLB3036GPBF is a fourth generation low-voltage, low-RDS(on) MOSFET. It is designed to provide enhanced power density while maintaining extremely low RDS(on) at higher duty cycles. This MOSFET can be used in a wide range of applications, from consumer electronics and automotive components to renewable energy and wireless communications. It can also be used to reduce power consumption as it has a high current capacity and low power-levels input.

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