Allicdata Part #: | IRLBA1304-ND |
Manufacturer Part#: |
IRLBA1304 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 185A SUPER-220 |
More Detail: | N-Channel 40V 185A (Tc) 300W (Tc) Through Hole SUP... |
DataSheet: | IRLBA1304 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | Super-220™-3 (Straight Leads) |
Supplier Device Package: | SUPER-220™ (TO-273AA) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7660pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 110A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 185A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The International Rectifier IRFBA1304 is a single N-channel power metal-oxide semiconductor field-effect transistor (MOSFET). It is designed to be used with a majority of applications in the auto, industrial, appliance and equipment sectors. This MOSFET is suitable for use in DC-DC converters and power supplies. It is a versatile MOSFET which can be used for a range of tasks such as high-speed switching, linear regulation and pulse amplification.
The International Rectifier IRFBA1304 is primarily composed of four principal parts: the body, the gate, the source and the drain. The body is composed of an insulation layer and the bulk silicon-based semiconductor material. The source and drain are the two terminals that constitute the anode and cathode of the device, respectively. Gate is a closed box that is insulated and connected to the body, controlling the current flow of the device.
Working principle of the International Rectifier IRFBA1304 requires control of the channels formed in the body. A small voltage is induced in the gate and this voltage varies the electrical current flow through the channels. Voltage induced in the gate changes the properties of the body’s semiconductor material, thus allowing the current to be regulated, depending on the magnitude of the voltage in the gate.
The intensity of the MOSFET\'s electrical current is controlled by the positive and negative charges within the gate, regulated by controlling the magnitude of the gate voltage. When the voltage induced in the gate is greater than the threshold voltage of the device, it saturates and allows current to flow between the source and the drain. For a saturated state, the current flow is proportional to the applied gate voltage.
The International Rectifier IRFBA1304 is designed to be operated at a maximum voltage at the drain of 30 Volts, and at a maximum drain-source voltage of 17 Volts when the drain current of the device is at its maximum. In addition, the on resistance between the source and the drain can reach 6.4 mOhms when the tiny gate voltage of 4 Volts is applied. Furthermore, the International Rectifier IRFBA1304 has a maximum frequency of operation at 74MHz under continual conduction mode.
The International Rectifier IRFBA1304 is incredibly versatile and can be used in a multitude of electronic applications such as high-speed switching, linear regulation and pulse amplification. Furthermore, it is especially suitable for use in DC-DC converters and power supply applications for various electronics as it can operate at low gate voltages and high currents.
The specific data is subject to PDF, and the above content is for reference
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