Allicdata Part #: | IRLBD59N04ETRLP-ND |
Manufacturer Part#: |
IRLBD59N04ETRLP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 59A D2PAK-5 |
More Detail: | N-Channel 40V 59A (Tc) 130W (Tc) Surface Mount TO-... |
DataSheet: | IRLBD59N04ETRLP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA |
Supplier Device Package: | TO-263-5 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2190pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRLBD59N04ETRLP Application Field and Working Principle
This article covers the application field and working principles of IRLBD59N04ETRLP. IRLBD59N04ETRLP is a P-Channel enhancement mode field-effect transistor (FET) with a high-density cell design. It is one type of single MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is commonly used in the design of power switches, amplifier circuits, and drives in various electric and electronic appliances. Its benefit is easy to use, low on-resistance and excellent switching performance. So, let’s get into it.
First of all, IRLBD59N04ETRLP is an ideal choice for applications such as motor control, lighting control and power supplies since it has a low on-resistance, usually below 0.049ohm and peak transconductance values as high as 614 mhos. It is also applicable in low-side and high-side switches in switch-mode power supplies or DC-DC converters, the output of inductive loads in the automotive industry, and load switches of home appliances such as toasters and video recorders. Moreover, IRLBD59N04ETRLP utilizes the fast switching speed with a fast switching speed (typical turn-on/turn-off times of approximately 30 ns typical) and can be used in pulse width modulation (PWM) as well.
Now, let’s talk about the working principle of IRLBD59N04ETRLP. IRLBD59N04ETRLP is a P-channel MOSFET with a total gate thickness of roughly 1.9 nm and a maximum voltage breakdown across the drain-source of -55V. It is designed with a high-density cell structure, which helps to reduce the on-resistance of the transistor, minimizing the amount of power it has to dissipate during operation. The gate of the transistor is designed so that it can be driven by a higher voltage at the gate-source terminal. This helps to reduce the gate resistance and ensures that the FET can be adequately driven even when the voltage at its gate is smaller than its source. When the drain and source voltages are the same, the FET behaves as a high-impedance resistance. However, when current passes through the drain, a voltage drop is produced across it, which in turn turns the FET into a low-impedance source. This helps to reduce the magnitude of the current passing through the FET, resulting in a reduction in power consumption.
The IRLBD59N04ETRLP is a transistor that is widely used in various applications such as motor control, lighting control and power supplies due to its low on-resistance and excellent switching performance. Its high-density cell structure works to reduce the on-resistance, resulting in low power consumption. Moreover, the gate of the transistor can be driven by higher voltages at the gate-source terminal, which essentially reduces the gate resistance and enhances the switching performance. All these factors make the IRLBD59N04ETRLP an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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