IRLB4132PBF

Vgs(th) (Max) @ Id:	2.35V @ 100µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	140W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5110pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	54nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	78A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

IRLB4132PBF is a Field Effect Transistor (FET) which is a type of transistor that uses an electric field to control the flow of current. It is specifically a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and is sometimes referred to as a "pinched off" type FET. The IRLB4132PBF is a N-Channel pseudomorphic High Electron Mobility Transistor (HEMT) designed for high-frequency switch mode applications such as office automation, telecom and automotive sectors.

Application Field

The IRLB4132PBF is a versatile FET and is suited for use in many areas of electrical and electronic engineering. It can be used as a switch in circuits, as a voltage-controlled resistor, and as a power transistor in power amplifiers and switching power converters. It is often used in power management applications such as DC/DC converters, in inverter circuits, and in various switch mode power supply applications.It is also suitable for noise cancellation circuits, general switching applications, high frequency switching, and switch mode converter circuits. It can be used in automotive, telecom and office automation applications, as well as in high-frequency analog and digital circuits.

Dimensions and Packaging

The IRLB4132PBF is available in a 30V rated TO-251 package. It has a power dissipation of 20W in a surface mount package and its lead-free package is suitable for automotive applications. The IRLB4132PBF has a maximum voltage between gate and source (VGS) of ±30V, a drain current ID of 30mA, and a drain to source voltage RDS(ON) of 4−6Ω.

Working Principle

The IRLB4132PBF is an N-Channel Pseudomorphic High Electron Mobility Transistor (PHEMT) which means that it can be operated with very fast switching times. It is basically a voltage controlled switch and it works on the principle that an external voltage applied to the Gate of the transistor will control the flow of current between the Source and the Drain.When the Gate voltage is negative with respect to the source (VGS < 0), the channel between the Source and Drain is “pinched off”, preventing the flow of current through the transistor. When the Gate voltage is positive with respect to the source (VGS > 0), the channel is opened and a current can flow from the Drain to the Source. The ability of the IRLB4132PBF to quickly switch between “on” and “off” states makes it ideal for use in high frequency switch mode applications.

Advantages and Disadvantages

The IRLB4132PBF offers a number of advantages over other types of transistors. Its pseudomorphic design has improved switching speed, while its high current handling capability makes it ideal for use in high power switch mode applications. The low RDS(ON) of 4-6Ω leads to improved efficiency and lower power dissipation, making it suitable for applications that require low power consumption. The IRLB4132PBF also has a lead-free package which makes it suitable for automotive applications.However, the IRLB4132PBF also has some drawbacks. Its high frequency nature means that it is more susceptible to noise, crosstalk, and radiation interference than other types of transistors. Its lead-free package may also be less durable than other types of packages.

Conclusion

The IRLB4132PBF is a versatile Field Effect Transistor (FET) which is used for a variety of applications including power management, noise cancellation, and high frequency switching. Its pseudomorphic High Electron Mobility Transistor (HEMT) design has improved switching speed, while its low RDS(ON) leads to low power dissipation and improved efficiency. The IRLB4132PBF is available in a 30V rated TO-251 package with a lead-free package suitable for automotive applications. Although it has some drawbacks, such as susceptibility to noise, crosstalk, and radiation interference, its advantages make it a good choice for many electrical and electronic applications.

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