Allicdata Part #: | IRLB3813PBF-ND |
Manufacturer Part#: |
IRLB3813PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 260A TO-220AB |
More Detail: | N-Channel 30V 260A (Tc) 230W (Tc) Through Hole TO-... |
DataSheet: | IRLB3813PBF Datasheet/PDF |
Quantity: | 4038 |
Vgs(th) (Max) @ Id: | 2.35V @ 150µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8420pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.95 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 260A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRLB3813PBF is a N-Channel, Power MOSFET Transistor that is broken down into two categories: Single and Double. It is a vertical double-diffused MOSFET that features a low-on resistance and high-current capacity. This type of transistor is predominantly used in audio amplifier and industrial motor control applications.
The IRLB3813PBF has a low-on resistance of 1.2 ohms and can handle up to 44A of continuous drain current. This makes it ideal for applications that require high-current switching, such as DC/DC converters and power supply circuits. Additionally, this transistor also has excellent ESD protection, making it suitable for high-voltage, rugged automotive applications.
The IRLB3813PBF is also ideal for amplifier circuits, as it has a fast switching speed of 10ns. This is due to its low-gate charge, which helps to reduce switching losses. This makes the transistor ideal for amplifier circuits that require fast switching and low-power consumption. Additionally, it has a low output capacitance, which further reduces the power consumption of the device, making it a good choice for audio amplifiers and other high-current applications.
The IRLB3813PBF has a rugged design and is resistant to heat and vibration. This makes it a good choice for automotive, avionics, and industrial applications. Additionally, the device is lead-free and RoHS compliant, making it suitable for many industries that are subject to these regulations.
The IRLB3813PBF operates by controlling the flow of current through its terminals. The operational principle of this transistor is referred to as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The flow of current is controlled by a gate voltage that is applied to the gate terminal of the transistor. When the gate voltage is above a certain threshold voltage, the transistor is said to be “on” and the current will flow. Conversely, when the gate voltage is below the threshold voltage, the transistor is said to be “off” and no current will flow.
Overall, the IRLB3813PBF is a versatile and rugged N-Channel, Power MOSFET Transistor that is suitable for many different applications. It features a low-on resistance, high-current capacity, excellent ESD protection, and a fast switching speed. Additionally, it is lead-free and RoHS compliant, making it suitable for many industries that are subject to these regulations. Its versatility makes it an ideal choice for a wide range of applications including audio amplifiers, industrial motor control, DC/DC converters, power supply circuits, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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