IRLB8721PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRLB8721PBF is a type of single N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) which is produced by Infineon Technologies. It is a voltage-controlled device widely used in various applications. The IRLB8721PBF has an improved thermal resistance, gate charge, and drive current compared to the previous version – IRLB8721.

The IRLB8721PBF belongs to Infineon\'s Green Power series, which means it has a low gate charge, low on-state resistance, and low threshold voltage. The on-state resistance of the device is 7.8 mOhm for a drain to source voltage of 10V, and the maximum threshold voltage is 2.5V. This makes it very well-suited for higher current applications as it can handle up to 8 A of sustained drain current in a single package.

The IRLB8721PBF is particularly useful in power conversion and inverter applications, where it can be used to create an efficient, high-performance power source. It can also be used for lighting, audio amplifier applications, and motor control applications. It has a low drain-source voltage that makes it particularly useful for these types of applications.

The IRLB8721PBF also features a variety of safety and protection features. It has an over-voltage protection of 20V, as well as an over-temperature protection of 165°C. It also has a drain-source diode with a reverse voltage of 25V, making it safe to use in a number of different applications.

In terms of gate charge, the IRLB8721PBF has a low gate charge of only 1.8nC and a fast rising edge time of 1.2ns. This allows for fast switching times and higher efficiency, making it ideal for high-load applications.

As far as the working principle of the IRLB8721PBF is concerned, it is based on the metal-oxide-semiconductor field-effect transistor (MOSFET) which is the most widely used type of field-effect transistor. It masks a voltage-controlled switch that is capable of controlling the flow of electric current. When voltage is applied to the gate, the resistor between source and drain is shortened leading to lower resistance and allowing a greater flow of current. The resistance is controlled by voltage applied to the gate.

In conclusion, the IRLB8721PBF is an effective single N-Channel MOSFET produced by Infineon Technologies. It is particularly useful in power conversion and inverter applications and has a variety of safety and protection features such as over-voltage protection and over-temperature protection. It also has a low gate charge and a fast rising edge time, making it efficient and ideal for high-load applications.

The specific data is subject to PDF, and the above content is for reference