IRLB8743PBF

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This article will discuss the IRLB8743PBF and its application field and working principles. The IRLB8743PBF is a P-channel enhancement-mode vertical double-diffused metal-oxide-semiconductor field effect transistor (MOSFET). This power MOSFET is designed with a N-channel silicon gate and utilizes high-cell density to enhance the on-state resistance, improve switching speed and reduce gate charge and on-state losses.

The IRLB8743PBF is suitable for use in load switching, battery management, motor and power conversion applications, and in high reliability, low or medium Voltage applications. It has a Continuous Drain Current rating at 25 degrees Celsius of up to 34.7A and a Pulsed Drain Current rating at 25 degrees Celsius of up to 173A. It also has a Drain-Source breakdown voltage of 42V, a maximum Gate-Source voltage of +/-20V, and a maximum Gate Threshold Voltage of 2.4V.

The IRLB8743PBF’s working principle is based on charge-carrier injection from a metal gate electrode into a semiconductor channel. This injection of either electrons (for an N-channel MOSFET) or holes (for a P-channel MOSFET) creates an inversion layer in the semiconductor body that modulates the conductivity between source and drain. This can support an inversion, accumulation, or depletion mode of operation.

The IRLB8743PBF is composed of a series of lightly doped regions that are diffused into a semiconductor substrate. The N-Channel MOSFET consists of four regions, three of which are part of the active channel and the fourth is the gate. The N-channel MOSFET is composed of a lightly doped source, drain, and body regions which are diffused into the semiconductor substrate to form a vertical double diffused MOSFET structure. The remaining region is the gate which is formed using photolithography and is not diffused into the substrate. A source contact is also provided on the bottom of the MOSFET.

The IRLB8743PBF is designed with a P-Channel MOSFET structure which creates a vertical double-diffused MOSFET consisting of a lightly doped drain and body regions that are diffused into the substrate and a gate formed from a gate oxide and metal gate electrode. The gate oxide is composed of a thin layer of silicon dioxide between the metal gate electrode and the substrate. The P-channel MOSFET also has a source contact on the bottom of the MOSFET.

The IRLB8743PBF’s operation is based on the principle of charge-carrier injection from the gate electrode into the underlying conduction channel. When a voltage is applied to the gate, electrons are injected into the P-channel depletion region beneath it. This injection of electrons into the conduction channel increases the conductivity between source and drain. This increase of conductivity enables the P-channel MOSFET to switch on and conduct current through the load.

The IRLB8743PBF is designed to operate normally in enhancement mode, meaning that the gate voltage is higher than the source voltage. However, it is also designed to tolerate a voltage applied in the opposite direction and will operate in depletion mode as well. When a negative voltage is applied to the gate, the current conducted between source and drain is reduced, resulting in a decrease in conduction.

The specific characteristics of the P-channel MOSFETs are determined by the size and doping level of the active regions of the device and the channel length of the MOSFET. The IRLB8743PBF utilizes a high cell density design to reduce the on-state resistance and improve switching speed and reduce gate charge and on-state losses. This design also helps provide extremely low gate-source conduction and high breakdown voltage.

Overall, the IRLB8743PBF is a high performance, high reliability, low or medium Voltage MOSFET that is well-suited for use in applications such as load switching, battery management, motor and power conversion applications. Its low on-state resistance and extremely low gate-source conduction help reduce on-state losses, while its high-cell density design helps to provide improved switching speed and reduce gate charge.

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