IRLB3036PBF Allicdata Electronics
Allicdata Part #:

IRLB3036PBF-ND

Manufacturer Part#:

IRLB3036PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 195A TO-220AB
More Detail: N-Channel 60V 195A (Tc) 380W (Tc) Through Hole TO-...
DataSheet: IRLB3036PBF datasheetIRLB3036PBF Datasheet/PDF
Quantity: 6421
Stock 6421Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 380W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRLB3036PBF is a N-channel MOSFET produced by Infineon Technologies. It belongs to their Advanced HEXFET Power MOSFET product range, and is available in a TO-220 package. This MOSFET has a maximum drain-source voltage of 600V, an RDS (on) of 0.006Ohm, a maximum current rating of 37A, and a maximum power rating of 125W. It is designed for use in high-power applications, such as commercial and industrial motor control, switching power supplies, and solar panel inverters.

To understand how the IRLB3036PBF works, it is important to know two fundamental terms: Gate-Source Voltage (Vgs) and Drain-Source Voltage (Vds). The Gate-Source Voltage (Vgs) is the voltage present between the MOSFET\'s Gate and Source electrodes. The Drain-Source Voltage (Vds) is the voltage present between the MOSFET\'s Drain and Source electrodes. The Gate-Source Voltage (Vgs) is used to control the current flowing through the MOSFET and the Drain-Source Voltage (Vds) is the voltage which appears across the MOSFET when a current is flowing through it.

A MOSFET can be thought of as an electronic switch, and when it is turned off, very little current (or no current at all) flows through the MOSFET. This is because the Gate-Source Voltage (Vgs) is set at or below the MOSFET\'s turn-off voltage. When the Gate-Source Voltage ( Vgs) is increased above the MOSFET\'s turn-on voltage, the MOSFET is said to be “on” and a current will flow through it. This current flow is proportional to the size of the Gate-Source Voltage (Vgs) and the Drain-Source Voltage (Vds).

The IRLB3036PBF can switch very large currents because of its low on-resistance (RDS (on)) and maximum current rating (37A). Its low on-resistance can significantly reduce power losses, while its high current rating allows it to handle large currents without overheating.

The IRLB3036PBF is typically used in high-power applications, such as commercial and industrial motor control, switching power supplies, and solar panel inverters. In motor control applications, the MOSFET is used to switch the motor\'s power on and off, as well as providing speed control. In solar panel inverter applications, the MOSFET is used to switch the DC power of the solar panel into AC power. In switching power supplies, the MOSFET is used for high-frequency power switching.

Overall, the IRLB3036PBF is a high-performance N-channel MOSFET that is well-suited for high-power applications. Its low on-resistance can significantly reduce power losses, while its high current rating allows it to handle large currents without overheating. It is typically used in applications such as industrial motor control, switching power supplies, and solar panel inverters.

The specific data is subject to PDF, and the above content is for reference

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