IXFH35N30Q

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IXFH35N30Q is a high voltage, ultra low on-resistance MOSFET, suitable for a wide range of applications. It is part of the IXYS Power MOS family, which is produced by IXYS Corporation and is a reliable, high performance, and cost-effective choice.

The IXFH35N30Q is specifically designed to provide high current drive performance in applications such as switch mode power supplies, HVAC, industrial motor control circuits, and power inverters. It is also suitable for a range of consumer electrical equipment, including AC/DC, DC/AC converters, and uninterruptible power supplies. With its high-current capabilities, the IXFH35N30Q is a popular choice for power applications.

Application Field

The IXFH35N30Q can be used in a variety of applications where switching and high current are critical. It is especially suitable for high-frequency switching applications, such as switch mode power supplies, motor control, HVAC, and digital power converters. It is also ideal for industrial applications such as motor control circuits where the need for high current drive capabilities is paramount. Furthermore, the IXFH35N30Q can be used in consumer electronics, such as AC/DC, DC/AC converters, and uninterruptible power supplies, due to its low on-resistance and fast switching time.

Furthermore, the IXFH35N30Q is able to provide reliable performance in critical applications even when exposed to severe environmental conditions. It is capable of operating at temperatures of up to +150°C and withstands voltage drops of up to 1500 V. With its ability to provide reliable performance in extreme conditions, the IXFH35N30Q is an excellent choice for applications that require high reliability.

Working Principle

The IXFH35N30Q is an N-Channel MOSFET which uses an insulated gate to control the flow of current between the source and the drain. When a voltage is applied to the gate, it creates an electric field, which causes the electrons in the channel to become mobile. This decreases the resistance of the channel and allows current to flow through. When the voltage is removed, the electrons stop moving and the channel returns to a non-conductive state.

The IXFH35N30Q is designed to offer ultra-low on-resistance values and high drive current. This is achieved through the use of an optimized N-channel structure and an advanced epitaxial process. The device uses a robust packaging technology to ensure high reliability and optimal performance, even when exposed to extreme environmental conditions. Additionally, the IXFH35N30Q features an ultra-low gate charge and high dV/dt rating to ensure fast switching speeds and low power consumption for improved efficiency.

In conclusion, the IXFH35N30Q is a reliable and high-performance MOSFET suitable for a wide range of applications, including switch mode power supplies, HVAC, industrial motor control circuits, and power inverters. With its ultra-low on-resistance, high current driving capabilities, and robust packaging technology, the IXFH35N30Q provides reliable and cost-effective performance in even the most demanding applications.

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