IXFH60N20 Discrete Semiconductor Products

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The IXFH60N20 is a single N-channel enhancement MOSFET designed for use in a variety of application fields. It has a drain current up to 51A, a continuous drain current of 24A and a maximum drain source voltage of 60V. Working under typical conditions, the IXFH60N20 has a very fast switching speed, making it a great choice for applications where high speed and accuracy are desired.

The IXFH60N20 is based on silicon-gate technology using a standard MOSFET structure. This structure consists of a drain contact that is connected to the source contact and a gate terminal which is connected to the gate oxide. The gate oxide acts as an electrically insulating barrier between the gate and the source and drain contacts, allowing for an adjustable body voltage between the gates and the source/drain terminals. When a gate voltage is applied to the gate oxide of the device, an electric field is formed which in turn controls the current through the device.

The working principle of the IXFH60N20 is based on a characteristic of the MOSFET called field-effect. Field-effect is the phenomenon where a voltage difference between the underlying semiconductor and the gate oxide induces a current flow between the underlying semiconductor and the source/drain terminals. When the gate voltage reaches a certain threshold, the electric field between the gate and the source/drain is increased, which in turn increases the current flow through the device.

The IXFH60N20 is mainly designed for use in medium-power applications such as power line conditioning, high-efficiency switching, power conversion and motor control. Its fast switching speed enables it to be used in high-frequency systems, such as cellular base stations, RF communication systems, high-speed computers and high-speed logic circuits.

The IXFH60N20 is also an excellent choice for use in consumer electronics, such as portable computers, televisions, and CD players, as well as automotive applications, such as power windows, door locks, and fuel injection systems. Additionally, the IXFH60N20 can be used in any application that requires precise control of current or voltage.

In summary, the IXFH60N20 is a single N-channel enhancement MOSFET designed for use in a wide range of applications. It has a fast switching speed, a drain current up to 51A, and a maximum drain source voltage of 60V. Its field-effect technology allows it to be used in medium-power applications, such as power line conditioning, high-efficiency switching, power conversions, and motor control as well as consumer electronics and automotive applications.

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