IXFH30N50Q

IXFH30N50Q Application Field and Working Principle

IXFH30N50Q is a Field-Effect Transistor (FET) manufactured by IXYS Corporation. Unlike conventional bipolar transistors, which rely on two p-n junctions to control current flow, FETs use a non-conductive gate to switch the current on and off. The IXFH30N50Q is a High Voltage MOSFET (HVMOSFET) with an extremely high drain-source breakdown voltage and an enhanced performance rating. This type of transistor is ideal for applications requiring lower operating voltages, such as power management and amplifier designs.

Properties of IXFH30N50Q

The main physical attribute of the IXFH30N50Q is its ability to operate in extreme voltage ranges, up to 800V. This makes the FET ideal for appropriately designed circuits and applications. The high-side transistor packs a drain current of 133A and a source-drain voltage of 800V. It has a total gate charge of 16nC and a single device switching time of 64ns, which makes it ideal for operation in high-frequency applications. The superior power rating of the IXFH30N50Q further reduces power losses in low-voltage circuits.

Applications

The IXFH30N50Q is a popular choice for power conversion applications. Power converters require extremely efficient and precise power control, and the IXFH30N50Q offers a dependable solution that keeps power losses to a minimum. It is also ideal for circuit designs that require low operating voltages and a high peak or pulse-width current. The IXFH30N50Q is used in switching power supply circuits, inverters, trans-line coupling circuits and pre-driver circuits, among others.

Working Principle

The IXFH30N50Q Field-Effect Transistor is based on the principle of field-effect mobility. This kind of transistor works on the principle of controlling the current flow between two terminals( source and drain) using a gate terminal. When the gate is at ground potential, the drain-source channel is disconnected, thus preventing current flow. However, when the gate voltage is increased, the electric field between the gate and the drain increases dramatically, allowing current to flow through the channel. This property of the transistor allows it to be used in many applications, such as high current circuits, linear signal amplification and switching.

Conclusion

The IXFH30N50Q is a high voltage MOSFET manufactured by IXYS Corporation. It is ideal for applications requiring lower operating voltages and high peak or pulse-width current. This kind of transistor works on the principle of field-effect mobility and is used in many applications such as power conversion, switching power supplies, inverters and trans-line coupling. With its high drain-source voltage and enhanced performance, the IXFH30N50Q is an ideal choice for circuit designs that require maximum efficiency.