IXFH10N100

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The IXFH10N100 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) which is ideal for use in power management and power conversion applications. It is an enhancement type of transistors which is commonly used in many electronic designs.

The IXFH10N100 is an extremely versatile and powerful MOSFET. It is used in a variety of applications such as power sequencing, inrush current limiting, gate drive and protection circuits. The FET is also used for digital switching, motor and solenoid control and power semiconductor devices.

The IXFH10N100 has a drain-source voltage of 100V, which makes it suitable for use in high voltage applications. It also has a maximum drain current of 5.6A and a gate-source voltage of ±20V, making it able to handle large currents. The on-resistance of the IXFH10N100 is low, providing for low losses and high efficiency in power conversion applications.

The IXFH10N100 utilizes a N-Channel MOSFET structure, which means its source and drain regions are connected by a lightly doped n-type substrate. This structure provides the FET with a low on-resistance, higher power handling capability and improved temperature stability compared to other types of transistors.

The working principle of the IXFH10N100 is that it uses an applied voltage to the gate-source junction to control the flow of current from the source to the drain. When the voltage is applied at the gate-source junction, electrons are drawn towards the gate, which creates an electric field that attracts an additional layer of electrons to the surface of the drain region, resulting in an increased current flow.

When the gate-source voltage is reduced, the electric field is reduced, and the current flow reduces as well. This is why the IXFH10N100 is able to handle large currents with very low losses. It is also able to switch off the current quickly when required, making it ideal for power sequencing applications.

The IXFH10N100 is a versatile and powerful MOSFET with a wide range of applications. It is commonly used for power sequencing, inrush current limiting, gate drive, motor and solenoid control, and power semiconductor devices. It has a low on-resistance, high voltage tolerance and wide temperature range, making it suitable for a variety of power management applications.

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