IXFH110N15T2

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IXFH110N15T2 is an n-channel insulated gate field effect transistor (IGFET) from NXP Digital Power. It is a kind of field effect transistor (FET) with a single gate. This device is selected due to its low on-state resistance (<2.2 Ω) and the highest power density available among similar devices.

In the application field, this device can be used in AC/DC converters, DC/DC converters, high speed switching and other applications that need small gate charge and low RDS(on) so as to stabilize temperature rise and output voltages.

The working principle of IXFH110N15T2 is based on the insulated gate\'s ability to control current. An insulated gate is a conducting area covered by a layer of insulation. When the voltage across the gate is above the threshold voltage, a conductive channel is created from the source to the drain, which allows current to flow.

IXFH110N15T2 features an enhanced performance in comparison with its predecessors. Its low on-state resistance and low input capacitance combined with high power density and high switching performance makes it suitable for a wide range of applications. It also provides a simple, automated control to its users.

The device uses an enhanced high-voltage process which makes it more reliable compared to traditional MOSFETs, and also has a lower temperature rise. The device is protected against short-circuit and overload since it is equipped with an integrated circuit breaker. Furthermore, its small form factor offers a space-saving design.

IXFH110N15T2 also features an advanced thermal shutdown for extra protection. It includes a built-in LED indicating the state of the device. The device can be used in either the linear or switching mode for maximum control of current and voltage.

In conclusion, IXFH110N15T2 is an efficient, reliable, and suitable device for AC/DC converters, DC/DC converters, high speed switching, and other applications requiring a small gate charge, low RDS(on) and high power density. The device works by allowing current to flow through the insulated gate based on the threshold voltage. Its enhanced performance and additional features make it a reliable and efficient choice for industrial applications.

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