Allicdata Part #: | IXFH76N15T2-ND |
Manufacturer Part#: |
IXFH76N15T2 |
Price: | $ 3.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 150V 76A (Tc) 350W (Tc) Through Hole TO-... |
DataSheet: | IXFH76N15T2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 3.09729 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 350W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 97nC @ 10V |
Series: | HiPerFET™, TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 38A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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A field-effect transistor (FET) is a type of transistor that operates using an electric field to control the transistor\'s current flow. IXFH76N15T2 is a type of FET known as a metal oxide semiconductor field-effect transistor (MOSFET) which has three main terminals, the source, the drain and the gate. It is often used in integrated circuit as a switching device or a voltage-controlled resistor to control the available current in a circuit, and also as an amplifier by changing input resistance of the source.
FETs are voltage-controlled transistors, meaning that their current can be controlled by a voltage applied to their gate, but the exact way in which this is done varies depending on the type of FET. IXFH76N15T2, like all MOSFETs, has an insulated gate that controls the flow of current, however, the IXFH76N15T2 is a unique type of MOSFET in that it utilizes a thin layer of metal oxide to insulate the gate from the other terminals of the transistor.
The working principle of the IXFH76N15T2 involves a voltage applied to the gate to selectively turn the device on or off. When the voltage on the gate is high (equal to or greater than the threshold voltage), it creates an electric field that attracts current carriers, allowing current to flow through the device. This is known as the inversion region of the MOSFET, meaning the gate is switched to an opposite logic state. When the gate voltage is lowered below the threshold, the electric field no longer attracts the carriers and the device switches off. This is known as the cut-off region of the transistor.
IXFH76N15T2 has a wide variety of applications. It is often used in power electronics as a switching device, amplifiers, and voltage reference. It is also commonly used in digital circuits as an inverter (logic NOT gate), which can utilize its inversion region to switch between logic one and logic zero states. It is also used in analog circuits, such as filters and drivers, and can be utilized for precision voltage regulation or for noise reduction. IXFH76N15T2 can also be used in light emitting diodes (LEDs) as a driver to control the current. Many consumer electronics, such as cell phones and tablets, also utilize IXFH76N15T2 as well.
IXFH76N15T2 is a powerful and versatile transistor that can be used in a wide variety of applications. By understanding its working principle and applications, engineers can more effectively design and develop devices that employ the IXFH76N15T2 FET.
The specific data is subject to PDF, and the above content is for reference
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IXFH50N85X | IXYS | -- | 65 | 850V/50A ULTRA JUNCTION X... |
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IXFH20N85X | IXYS | -- | 9 | 850V/20A ULTRA JUNCTION X... |
IXFH67N10 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 67A TO-2... |
IXFH35N30 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 35A TO-2... |
IXFH13N50 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 13A TO-2... |
IXFH22N55 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 550V 22A TO-2... |
IXFH15N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 15A TO-2... |
IXFH20N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 20A TO-2... |
IXFH6N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 6A TO-24... |
IXFH10N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 10A TO-2... |
IXFH10N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1KV 10A TO-24... |
IXFH32N50 | IXYS | -- | 1000 | MOSFET N-CH 500V 32A TO-2... |
IXFH40N30Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 40A TO-2... |
IXFH58N20Q | IXYS | -- | 1000 | MOSFET N-CH 200V 58A TO-2... |
IXFH20N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 20A TO-2... |
IXFH26N60Q | IXYS | -- | 1000 | MOSFET N-CH 600V 26A TO-2... |
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