IXFH76N15T2 Allicdata Electronics
Allicdata Part #:

IXFH76N15T2-ND

Manufacturer Part#:

IXFH76N15T2

Price: $ 3.44
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH
More Detail: N-Channel 150V 76A (Tc) 350W (Tc) Through Hole TO-...
DataSheet: IXFH76N15T2 datasheetIXFH76N15T2 Datasheet/PDF
Quantity: 1000
30 +: $ 3.09729
Stock 1000Can Ship Immediately
$ 3.44
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 350W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Series: HiPerFET™, TrenchT2™
Rds On (Max) @ Id, Vgs: 22 mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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A field-effect transistor (FET) is a type of transistor that operates using an electric field to control the transistor\'s current flow. IXFH76N15T2 is a type of FET known as a metal oxide semiconductor field-effect transistor (MOSFET) which has three main terminals, the source, the drain and the gate. It is often used in integrated circuit as a switching device or a voltage-controlled resistor to control the available current in a circuit, and also as an amplifier by changing input resistance of the source.

FETs are voltage-controlled transistors, meaning that their current can be controlled by a voltage applied to their gate, but the exact way in which this is done varies depending on the type of FET. IXFH76N15T2, like all MOSFETs, has an insulated gate that controls the flow of current, however, the IXFH76N15T2 is a unique type of MOSFET in that it utilizes a thin layer of metal oxide to insulate the gate from the other terminals of the transistor.

The working principle of the IXFH76N15T2 involves a voltage applied to the gate to selectively turn the device on or off. When the voltage on the gate is high (equal to or greater than the threshold voltage), it creates an electric field that attracts current carriers, allowing current to flow through the device. This is known as the inversion region of the MOSFET, meaning the gate is switched to an opposite logic state. When the gate voltage is lowered below the threshold, the electric field no longer attracts the carriers and the device switches off. This is known as the cut-off region of the transistor.

IXFH76N15T2 has a wide variety of applications. It is often used in power electronics as a switching device, amplifiers, and voltage reference. It is also commonly used in digital circuits as an inverter (logic NOT gate), which can utilize its inversion region to switch between logic one and logic zero states. It is also used in analog circuits, such as filters and drivers, and can be utilized for precision voltage regulation or for noise reduction. IXFH76N15T2 can also be used in light emitting diodes (LEDs) as a driver to control the current. Many consumer electronics, such as cell phones and tablets, also utilize IXFH76N15T2 as well.

IXFH76N15T2 is a powerful and versatile transistor that can be used in a wide variety of applications. By understanding its working principle and applications, engineers can more effectively design and develop devices that employ the IXFH76N15T2 FET.

The specific data is subject to PDF, and the above content is for reference

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