IXFH18N90P

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The IXFH18N90P is a Field Effect Transistor and Metal Oxide Semiconductor Field Effect Transistor (FET-MOSFET) in a single package. It is a high-performance device with a low-on resistance of 85 mOhm (max) and a voltage rating of 20V. The IXFH18N90P can be used in various applications including power stage switching, logic level dual-gate configurations, high-frequency amplifiers, and switching power supply circuits.

FETs and MOSFETs work by controlling current flow through a semiconductor, usually a silicon metal-oxide. This is done by an electric field that’s generated by an ‘applied voltage’. The current flows through the semiconductor in a certain way depending on the magnitude and voltage polarity of the applied voltage. FET-MOSFETs have a single gate (as opposed to dual gates) and are used for switching applications because they can be switched on and off with an applied voltage.

The IXFH18N90P is an N-channel FET-MOSFET. It has a gate, a source, and a drain. A voltage applied across the drain-source terminals will impede the current flow. An appropriate voltage between gate and source will open the passage as well as act as a variable resistor, allowing current flow to be regulated or changed.

The IXFH18N90P has a fast switching speed of 9ns (max). It also features high-power efficiency and low thermal resistance (R_ds(on), typical 0.075ohm). This makes it suitable for power devices and switching applications. Furthermore, its excellent Avalanche rated makes it suitable for power supplies with alternative topologies like non-inverting topologies.

In conclusion, the IXFH18N90P FET-MOSFET is a high-performance device suitable for power switching applications. Its fast switching speed, low-on resistance, and low thermal resistance make it an ideal choice for power supplies, logic level dual-gate configurations, high-frequency amplifiers, and switching power supply circuits.

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