IXFH18N90P Allicdata Electronics
Allicdata Part #:

IXFH18N90P-ND

Manufacturer Part#:

IXFH18N90P

Price: $ 6.19
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH TO-247
More Detail: N-Channel 900V 18A (Tc) 540W (Tc) Through Hole TO-...
DataSheet: IXFH18N90P datasheetIXFH18N90P Datasheet/PDF
Quantity: 1000
30 +: $ 5.56962
Stock 1000Can Ship Immediately
$ 6.19
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH18N90P is a Field Effect Transistor and Metal Oxide Semiconductor Field Effect Transistor (FET-MOSFET) in a single package. It is a high-performance device with a low-on resistance of 85 mOhm (max) and a voltage rating of 20V. The IXFH18N90P can be used in various applications including power stage switching, logic level dual-gate configurations, high-frequency amplifiers, and switching power supply circuits.

FETs and MOSFETs work by controlling current flow through a semiconductor, usually a silicon metal-oxide. This is done by an electric field that’s generated by an ‘applied voltage’. The current flows through the semiconductor in a certain way depending on the magnitude and voltage polarity of the applied voltage. FET-MOSFETs have a single gate (as opposed to dual gates) and are used for switching applications because they can be switched on and off with an applied voltage.

The IXFH18N90P is an N-channel FET-MOSFET. It has a gate, a source, and a drain. A voltage applied across the drain-source terminals will impede the current flow. An appropriate voltage between gate and source will open the passage as well as act as a variable resistor, allowing current flow to be regulated or changed.

The IXFH18N90P has a fast switching speed of 9ns (max). It also features high-power efficiency and low thermal resistance (Rds(on), typical 0.075ohm). This makes it suitable for power devices and switching applications. Furthermore, its excellent Avalanche rated makes it suitable for power supplies with alternative topologies like non-inverting topologies.

In conclusion, the IXFH18N90P FET-MOSFET is a high-performance device suitable for power switching applications. Its fast switching speed, low-on resistance, and low thermal resistance make it an ideal choice for power supplies, logic level dual-gate configurations, high-frequency amplifiers, and switching power supply circuits.

The specific data is subject to PDF, and the above content is for reference

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