IXFH12N90P Allicdata Electronics
Allicdata Part #:

IXFH12N90P-ND

Manufacturer Part#:

IXFH12N90P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 900V 12A TO-247
More Detail: N-Channel 900V 12A (Tc) 380W (Tc) Through Hole TO-...
DataSheet: IXFH12N90P datasheetIXFH12N90P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 380W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH12N90P is a high-voltage, high-speed N-channel power MOSFET from IXYS Corporation, an integrated circuit manufacturer. It is used in many applications, from consumer electronics to industrial equipment. This article will discuss the IXFH12N90P application field and working principle.

Types of Applications

The IXFH12N90P can be found in a number of applications including power supply, switch mode power supplies (SMPS), DC-DC converters, motor control and automotive power electronics. It is particularly well suited for high side operating conditions, thanks to its low RDS(on) and impressive current handling capabilities. The IXFH12N90P can also be used as an inverter, as it is able to enable fast switching on the negative side of the circuit while controlling the voltage drops on the high side of the circuit.

Working Principle

The IXFH12N90P is an N-channel enhancement-mode power MOSFET. It functions like a normal MOSFET, with four components: the source, drain, body and gate. When no voltage is applied to the gate, it functions as an open switch and will not allow current to flow through. However, when a voltage is applied to the gate, the MOSFET will be “turned on,” allowing current to pass through from the source to the drain.

The body is connected to the drain and the source, and acts as the “channel” in which current will flow from the supply to the load. The gate is what will control the flow of current by controlling the voltage applied to the body. When a positive gate voltage is applied, it will attract the electrons from the source to the body and thus a channel is formed where electrons can flow through.

The IXFH12N90P has a low on-resistance (RDS(on)) of only 0.70 mΩ maximum at 25°C, which makes it an ideal choice for applications that require efficient power transfer. It also offers ultra-low on-times, as well as extremely low gate charge (Qg) and excellent thermal characteristics.

Conclusion

The IXFH12N90P is a high-voltage, high-speed N-channel power MOSFET used in a number of applications, ranging from consumer electronics to industrial equipment. Its low RDS(on) and impressive current-handling capabilities make it an excellent choice for high-side operating conditions. The IXFH12N90P works by forming an electronic channel between the source and the gate, allowing current to flow through when a positive gate voltage is applied.

The specific data is subject to PDF, and the above content is for reference

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