Allicdata Part #: | IXFH12N100F-ND |
Manufacturer Part#: |
IXFH12N100F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS-RF |
Short Description: | MOSFET N-CH 1000V 12A TO-247AD |
More Detail: | N-Channel 1000V 12A (Tc) 300W (Tc) Through Hole TO... |
DataSheet: | IXFH12N100F Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5.5V @ 4mA |
Package / Case: | TO-3P-3 Full Pack |
Supplier Device Package: | TO-247AD (IXFH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 77nC @ 10V |
Series: | HiPerRF™ |
Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFH12N100F is a type of single field-effect transistor (FET). It is a type-N device fabricated with advanced trench technology for low on-state resistance. It is designed for high voltage power management in variety of applications, such as switch-mode power supplies, battery management, and other DC to DC converters.
A single FET is a three-terminal device in which the output current is controlled by an input voltage. It consists of a gate, a source, and a drain. The FET contains an active region where the current flows between the source and the drain. The gate controls the switching action of the FET by inducing an electric field in the active region. This electric field can either be turned on or off by the input voltage applied to the gate.
The IXFH12N100F can deliver up to 12A of continuous current with low on-state resistance. It has a breakdown voltage of 100V and its drain to source resistance is 0.75mΩ at 10V. It also has low gate charge and it can operate up to 175°C junction temperature. This makes it an ideal choice for applications in high temperature environments.
IXFH12N100F can be used in a variety of applications, including switch-mode power supplies (SMPS), battery management systems, and DC to DC converters. It can be used to control the switching action of power MOSFETs, thus enabling high-efficiency power conversion. In battery management systems, it can be used to monitor the battery voltage and current, and regulate the charging and discharging of the battery. It can also be used in DC to DC converters to control the current flow between two DC voltages.
In summary, IXFH12N100F is a type-N single field-effect transistor designed for high voltage power management in various applications. It can deliver up to 12A of continuous current with low on-state resistance and has a breakdown voltage of 100V. Its low gate charge and high junction temperature make it suitable for use in high temperature environments. IXFH12N100F can be used in SMPS, battery management systems, and DC to DC converters to control the switching action of power MOSFETs and regulate the battery charging and discharging.
The specific data is subject to PDF, and the above content is for reference
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