IXFH75N10

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The IXFH75N10 is a single, N-channel MOSFET (metal-oxide semiconductor field-effect transistor) with 75V drain-source voltage, 10A continuous drain current, and 100W power dissipation. This device is applicable to a wide range of electronic circuit designs, including but not limited to, switchmode power supplies, batteries, and instrumentation and telecom systems.

MOSFETs are semiconductor devices composed of metal-oxide-semiconductor layers configured to form a FET (field-effect transistor). FETs are active components that allow a small electrical current to control a much larger current and voltage, making them suitable for use as low power switches and amplifiers. As compared to metal-oxide transistors, MOSFETs offer simpler integration, lower power consumption, and higher speed rates, all at a lower cost of ownership.

The IXFH75N10 is a single, N-channel device, meaning it consists of a single P-type (positive) MOSFET layer and one N-type (negative) MOSFET layer. The IXFH75N10 has a breakdown voltage of 75V, meaning it can handle up to 75V of drain-source voltage before becoming unstable. The device also has a continuous drain current rating of 10A, meaning it can handle up to 10A of continuous current without breaking down. Additionally, the device has a power dissipation rating of 100W, meaning it can dissipate up to 100W of power without overheating.

The IXFH75N10 has a variety of applications. It is typically used as a switching element in switched-mode power supplies and battery chargers, where its combination of high current capability and low ON resistance makes it ideal for use in applications requiring low power consumption and high speed switching. It is also used in telecom systems, where its low noise characteristics and low ON resistance enable high-speed switching with minimum transmission line noise. Additionally, the IXFH75N10 can be used as an amplifier in instrumentation and communication equipment, where its high input impedance and low output impedance make it ideal for amplifying small signals with low voltage.

The IXFH75N10 utilizes a simple working principle. When no voltage is applied to its gate terminal, the gate-source junction is reverse-biased, preventing current from flowing between the drain and source. When a positive voltage is applied to its gate terminal, the gate-source junction is forward-biased, allowing current to flow between the drain and source. This type of operation allows the IXFH75N10 to act as an efficient switch, allowing current to flow for a specific period of time when its gate is powered. The IXFH75N10 can also act as an amplifier, allowing it to amplify small signals with low voltage.

In conclusion, the IXFH75N10 is a single, N-channel MOSFET that can be used in a variety of electronic application circuits. It has a breakdown voltage of 75V, a continuous drain current rating of 10A, and a power dissipation rating of 100W, making it suitable for applications requiring a low power consumption, high speed switching, and low noise performance. The device also works on a simple principle, wherein a voltage applied to its gate controls the flow current between its drain and source.

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