IXFH80N65X2 Allicdata Electronics
Allicdata Part #:

IXFH80N65X2-ND

Manufacturer Part#:

IXFH80N65X2

Price: $ 8.05
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 650V 80A TO-247
More Detail: N-Channel 650V 80A (Tc) 890W (Tc) Through Hole TO-...
DataSheet: IXFH80N65X2 datasheetIXFH80N65X2 Datasheet/PDF
Quantity: 2427
1 +: $ 8.04510
10 +: $ 7.80375
100 +: $ 7.64285
1000 +: $ 7.48194
10000 +: $ 7.24059
Stock 2427Can Ship Immediately
$ 8.05
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 890W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8245pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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In this article, we will discuss the IXFH80N65X2 application field and its working principle. As one of the most commonly used transistors in the world, the IXFH80N65X2 can be used in a wide variety of applications, including as a field-effect transistor (FET), as a metal oxide semiconductor field-effect transistor (MOSFET), and as a single-chip device.

The IXFH80N65X2 is a N-type field-effect transistor (FET) was developed to provide superior performance in low voltage and high current applications. Its advanced technology enables it to operate at higher voltages and currents from its source to its drain than lower-powered transistors. With its high performance, it is often used for high speed switching, high speed data transmission, and as a low-power switch.

The IXFH80N65X2 can be used as a MOSFET for a wide range of applications. A MOSFET is a type of field-effect transistor (FET) which uses the transfer of electrons from a metal gate to the channel. The flow of electrons from the gate to the channel is controlled by a voltage applied to the gate. This allows it to be used in applications such as analog switching, digital switching, DC-DC conversion, and power management.

A single-chip IXFH80N65X2 can also be used as a low-power switch. While MOSFETs are more efficient than low-powered transistors in switching applications, they cannot provide the same low-power switching capability. The IXFH80N65X2 can provide the necessary low power switching capabilities and can be used in applications involving the substitution of low-power switches.

The working principle of the IXFH80N65X2 is based on the application of an electric field. When a voltage is applied to the gate of the device, the electrons in the channel of the device, between the source and the drain are attracted to the gate. This increases the conductivity between the source and the drain, allowing the switching of currents between the source and the drain.

The IXFH80N65X2 is commonly used for high power switching applications and for low-power switching purposes, as well as for analog and digital switching in a variety of devices. Its versatility, dependability, and compatibility make it an ideal choice for a wide range of applications. Its superior performance, high speed switching, and low-power switching capabilities make it a preferred choice for many engineers.

The specific data is subject to PDF, and the above content is for reference

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