IXTC110N25T

Vgs(th) (Max) @ Id:	4.5V @ 1mA
Package / Case:	ISOPLUS220™
Supplier Device Package:	ISOPLUS220™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	180W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	157nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	27 mOhm @ 55A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IXTC110N25T is a high-performance depletion-mode insulated-gate field-effect transistor (IGFET) that is used in a wide range of applications in the electronics industry. This article will explain the application field and working principle of the IXTC110N25T.An insulated-gate field-effect transistor (IGFET) is a type of transistor that uses an electric field to control the flow of current. IGFETs are semiconductor devices that are constructed using a thin layer of silicon or other semiconductor material between insulating layers of oxide or nitride. The electric field is produced by a gate on the surface of the device. The presence of a voltage on the gate can cause current to flow between its source and drain, thus allowing the transistor to act as an amplifier or switch.The IXTC110N25T is a specialized type of IGFET known as a “depletion-mode” device. In a depletion-mode device, the gate voltage must be applied in order to turn the transistor off. This makes the IXTC110N25T suitable for applications in which a low-power device is required, such as in logic circuits. The IXTC110N25T also features an electrostatic discharge (ESD) protection mechanism for additional safety of its electronics components.The IXTC110N25T is primarily used in integrated circuits, such as those found in computers and control systems. The transistor can be used to control the flow of current and voltage in a circuit and can be used as a switch, amplifier or regulating device. It can also be used for switching high-frequency signals, as it boasts a high switching speed. Additionally, the IXTC110N25T is often used in voltage-to-current converters, DC/DC converters, and switching power supplies.The working principle of the IXTC110N25T is relatively simple. A voltage is applied between the gate and source terminals of the transistor, which causes an electric field to be established. This electric field then modulates the current flow between the source and drain terminals by adjusting the conductivity of the semiconductor material between them. The result is that the transistor can either reduce or increase the current flow depending on the gate voltage applied.In summary, the IXTC110N25T is a high-performance, depletion-mode insulated-gate field-effect transistor that is used in a variety of electronic applications. It is often used in integrated circuits, as well as voltage-to-current converters, DC/DC converters, and switching power supplies. The working principle of the IXTC110N25T is based on the modulation of the current flow between the source and drain terminals, which is controlled by the gate voltage. The IXTC110N25T provides high switching speed and is suitable for powering low-power devices such as logic circuits.

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