Allicdata Part #: | IXTC180N10T-ND |
Manufacturer Part#: |
IXTC180N10T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 90A ISOPLUS220 |
More Detail: | N-Channel 100V 90A (Tc) 150W (Tc) Through Hole ISO... |
DataSheet: | IXTC180N10T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | 150W (Tc) |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | ISOPLUS220™ |
Package / Case: | ISOPLUS220™ |
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The IXTC180N10T is a single enhancement N-channel MOSFET, which is an ideal choice for a wide range of applications ranging from low to high current and low to high voltage operations. XIICO\'s N-channel MOSFETs are manufactured using advanced trench process technology and feature a low profile and small footprint, allowing for easy implementation into many designs. With breakthrough performance characteristics and long device life, the IXTC180N10T is a great choice for any project.
The IXTC180N10T is designed for use in a range of applications, ranging from logic level switching, power switching, and signal processing. Its low on resistance and fast switching speed make it particularly suited for low voltage applications. It is also well suited for power supply, motor control, and switching power amplifiers. It can also be used for load switching, gate control, and signal amplification.
The IXTC180N10T has a maximum drain current rating of 180A and a maximum drain-source voltage of 600V. With its wide operating temperature range, it is suitable for both industrial and consumer applications. The IXTC180N10T also features a low on-resistance, making it an ideal choice for power applications that require high switching speeds. The IXTC180N10T is also able to handle high surge and overloads, providing a high level of reliability.
The IXTC180N10T operates with a basic edge-type threshold voltage that can range from -2.5 to -3 volts. It is also capable of withstanding high peak current spikes due to its high-speed switching capability. This makes it an ideal choice for applications that require low switching power dissipation or high frequency operation.
The IXTC180N10T can be used as an effective power switch in a variety of applications, routing either AC or DC current. Its wide operating temperature range allows it to be used in a variety of high performance and high reliability power systems. It has an impressive on-resistance, making it ideal for applications where precision switching control is required. The IXTC180N10T is a great choice for designers looking for a single MOSFET device with high performance, low cost, and a small form factor.
The IXTC180N10T is an excellent choice for applications that require high current and high voltage operations. It is well suited for power supply, motor control, and switching power amplifiers. It can also be used for load switching, gate control, and signal amplification. With its low on-resistance and fast switching speed, it is an ideal choice for low voltage applications. The IXTC180N10T is a great choice for designers looking for a single MOSFET device with high performance, low cost, and a small form factor.
The specific data is subject to PDF, and the above content is for reference
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