Allicdata Part #: | IXTC62N15P-ND |
Manufacturer Part#: |
IXTC62N15P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH ISOPLUS-220 |
More Detail: | N-Channel 150V 36A (Tc) 150W (Tc) Through Hole ISO... |
DataSheet: | IXTC62N15P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | ISOPLUS220™ |
Supplier Device Package: | ISOPLUS220™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2250pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | PolarHT™ |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 31A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXTC62N15P is a N channel enhancement-mode vertical PowerTrench Mosfet from IXYS Semiconductor and is ideal for high current and low voltage applications. It is designed for use in a variety of higher power applications, such as DC-DC converters, battery management, lighting controls and LED drivers, automotive applications, and low voltage motor control.
The IXTC62N15P Mosfet is a roll-over enhancement-mode device, meaning it is intended to be used primarily in applications where it is turned on and off and not for linear control like weak-signal amplifiers or audio amps. When it is turned off, the device has no gate bias requirement, so no drain current flows. This allows it to operate with very low input voltage and low drive power, and a much lower on-resistance than a regular unipolar (bipolar) transistor.
The IXTC62N15P operates on Voltages up to 100V, making it suitable for all medium current applications as it can support currents up to 62 amperes. This device also features low gate charge, low input and output capacitance, and superior thermal resistance.
The IXTC62N15P is manufactured using PowerTrench process which uses field plates in the gate stack to reduce gate-drain-induced capacitance, and vertical channels to improve electrostatic discharge (ESD) performance. This process technology also reduces the cross-section of the N-channel MOSFET, allowing it to be smaller in size while providing superior performance.
The working principle of an N-channel MOSFET is based on the application of a voltage at the input gate of the device. This potential creates an electric field within the gate-source structure, attracting holes from the area to the gate, thus allowing carriers to flow from the source terminal to the drain terminal. The magnitude of this gate voltage is proportional to the amount of carriers that can be pulled from the source, which allows for the current flow to be controlled by adjusting the applied voltage.
The IXTC62N15P is ideal for a variety of applications such as switch mode power supplies, DC-DC converters, battery management, lighting controls, LED drivers, automotive applications, and low voltage motor control. Its PowerTrench technology makes it a great choice for these types of applications due to its low gate charge, low input and output capacitance, and superior thermal performance.
The specific data is subject to PDF, and the above content is for reference
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