Allicdata Part #: | IXTC220N055T-ND |
Manufacturer Part#: |
IXTC220N055T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 55V 130A ISOPLUS220 |
More Detail: | N-Channel 55V 130A (Tc) 150W (Tc) Through Hole ISO... |
DataSheet: | IXTC220N055T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | ISOPLUS220™ |
Supplier Device Package: | ISOPLUS220™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 158nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXTC220N055T is an N-Channel MOSFET with a source-drain voltage of 55 Volts that is used in many electronics applications. As a power semiconductor, it is able to control the flow of electric current and is thus used to regulate the voltage and current in a device. This component is a component of the IXTC220N055T product family, which is designed for use in a variety of applications, ranging from switching power supplies to motor control.
MOSFETs are field-effect transistor semiconductor devices that are used to switch electronic signals and are the most widely used of all field-effect transistors. The IXTC220N055T MOSFET is an N-Channel type, which means that its conductivity increases with increasing gate-to-source voltage. It is also logic-level-adaptable, meaning it can be used with a variety of digital signal types.
The IXTC220N055T is especially suitable for switching applications which require low power losses. It has a very low on-resistance of 1.1 ohm for low power dissipation and cost-effectiveness as well as a very low gate charge of 26nC for high switching speed. Its breakdown voltage is also quite high at 281V- a level which can adequately accommodate most switching application voltages.
The IXTC220N055T’s application fields are wide-ranging. It is used in switching power supplies, particularly power Integrate Circuit (P-IC) and non-power IC applications such as USB, wireless communications, smart meters, battery management and ECU’s. It is also used in automotive and industrial motor control, HVAC systems and grid energy applications.
In terms of its working principle, the IXTC220N055T operates much like a typical N-Channel MOSFET. It can be used to regulate the flow of current between its source and drain pins when a voltage is applied. Essentially, when a voltage is applied to the gate pin, the MOSFET will turn on, allowing current to flow through it from the source to the drain. When the voltage is removed, the MOSFET will turn off, blocking any current from passing through it.
The IXTC220N055T thus proves to be an essential component in many electronics applications due to its fast switching speed, low on resistance, high breakdown voltage and cost effectiveness. It is able to help regulate the voltage and current in a variety of applications, making it a popular choice for engineers and designers.
The specific data is subject to PDF, and the above content is for reference
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