Allicdata Part #: | IXTC230N085T-ND |
Manufacturer Part#: |
IXTC230N085T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 85V 120A ISOPLUS220 |
More Detail: | N-Channel 85V 120A (Tc) Through Hole ISOPLUS220™ |
DataSheet: | IXTC230N085T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 85V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | ISOPLUS220™ |
Package / Case: | ISOPLUS220™ |
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The IXTC230N085T is a special type of field-effect transistor, commonly referred to as a MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. This device has a wide range of applications, from telecommunications to automotive and consumer electronics. It is currently considered to be the preferred device for use in high-current switches, power amplifiers, and voltage control devices.
The IXTC230N085T is constructed out of four essential elements: a source, drain, gate, and body. The source and drain are the electrical terminals that are responsible for driving current in and out of the device, while the gate terminal acts as a switch. Current flowing through the source and the drain is controlled by adjusting the voltage on the gate. By increasing the voltage, the device will allow more current to flow through, while decreasing the voltage will reduce the current. The body terminal is connected to the substrate, which provides an electrical path for the gate charge.
The IXTC230N085T is an N-channel device, meaning that the gate terminal is connected to the substrate, providing negative bias. Negative biasing will cause the device to have an enhanced off-state current, which is useful in some applications where restricting current is essential. In addition, N-channel MOSFETs are generally more efficient than P-channel MOSFETs, and they can withstand more voltage.
The major benefit of the IXTC230N085T is its design for optimized high-current performance. Its low on-state resistance ensures that it can handle large loads without suffering from heating-induced losses. In addition, its low gate-threshold voltage means that it can switch on and off quickly, making it ideal for applications where speed is of the essence. Moreover, its robust design ensures that it can withstand a wide range of operating conditions, such as high temperature and voltage spikes.
The IXTC230N085T is increasingly being used in a wide range of applications, from automotive and consumer electronics, to medical equipment and industrial machinery. In particular, it is finding increased usage in power switches and inverters, due to its low on-state resistance, high current capacity, and fast switching speeds. In addition, its robust design makes it ideal for high-temperature, high-voltage, and other difficult operating conditions.
The IXTC230N085T is an important type of MOSFET that can be used to control current in a wide variety of applications. Its unique design allows it to have a low on-state resistance, while still maintaining a fast switching speed and a robust design. As a result, it is increasingly being used in power switches, inverters, and other high-current devices. While its primary benefit lies in its current control, its enhanced off-state current makes it particularly useful for applications where limiting the current is important.
The specific data is subject to PDF, and the above content is for reference
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