Allicdata Part #: | IXTC280N055T-ND |
Manufacturer Part#: |
IXTC280N055T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 55V 145A ISOPLUS220 |
More Detail: | N-Channel 55V 145A (Tc) 160W (Tc) Through Hole ISO... |
DataSheet: | IXTC280N055T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | ISOPLUS220™ |
Supplier Device Package: | ISOPLUS220™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 3.6 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 145A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXTC280N055T is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is single, usually called circuit type JFET. It is mainly used in low-power switching or pre-amplification applications while consuming very low power.
The actual number of 280N055T refers to the Voltage level at which this MOSFET functions. 280 represents the maximum drain-source voltage Vds (continuous voltage) at 28 V, 055 signifies that the MOSFET can operate with a drain current Ids of 55 mA, and P-channel describes its type.
A MOSFET consists of three terminals, namely, gate (G), source (S) and drain (D). It also has a thin silicon layer covered by a thin gate oxide layer. These two layers indicate the effective working of the MOSFET.
The function of MOSFET is simple; through a small current which flows into the gate (G) ,large current can is allowed to the source (S) to drain (D).
Application Field
The IXTC280N055T is mainly used when there is a need of low power switching applications, or in situations where pre-amplifying is necessary. Other applications where the IXTC280N055T can be used include logic gates, distribution circuits, power supply circuits, signal signal amplification, and audio amplifiers.
Working Principles
The working principle of the IXTC280N055T is much like the majority of other MOSFETs. It works by having a thin gate oxide layer placed over a thin–silicon layer. When a small voltage is applied to the gate from the source, electrons will become depleted from the gate region, meaning that a very small current is necessary for conducting the large currents.
The silicon substrate creates an inversion layer, meaning that a reverse bias has been applied, allowing the current to be conducted from the source to drain. The thickness of the silicon layer is what determines the current conducting limits and hence, the densities.
The VthVoltage level of IXTC280N055T is 28 V and 55 mA. This means that the IXTC280N055T is suitable for low power switching applications or pre-amplification. The advantages of IXTC280N055T are its low power consumption and small physical size which allows it to fit in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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