IXTC130N15T

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IXTC130N15T is a type of transistor that belongs to the family of field effect transistors (internal FETs) and is categorised as a single Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a popular choice for applications because of its ability to handle large power loads, create fast switching speeds and provide excellent reliability.

A transistor is a type of an active electronic device that is used to control current and voltage in an electrical circuit or system. It is based on a semiconductor material, such as silicon and is made up of an N type and a P type region (the "gates").

In the case of a MOSFET, the transistor consists of three components: the input gate, the drain and the source. The input gate is the control part of the transistor, which controls the voltage at the input gate and in turn, controls the current flowing through the transistor. The drain and source are two terminals of the device, where current is made to flow to and from.

The IXTC130N15T is a part of IXYS\'s IXPV series and is a vertical double diffused Metal Oxide Semiconductor Field Effect Transistor (VDMOSFET) which provides high performance, low on-state voltage drop, low gate charge and fast switching capability. It is designed to be used in high power switching applications with large gate capacitance and gate pull down resistance. It also offers excellent high frequency operation and low switching losses.

IXTC130N15T can be used in a wide range of applications in power conversion and telecommunications. Some common applications include motor control, power factor correction and UPS systems, as well as switching power supplies, choppers and DC-DC converters. It is also suitable for use in radio frequency communication systems, home and office automation applications, and automotive solutions.

The principle of operation of the IXTC130 N15T is based on the fact that the drain-source current is modulated by the voltage applied to the input gate. The current (Id) flowing through the source-drain is controlled by the applied voltage to the gate. When a positive voltage is applied to the gate, the value of drain-source current is increased, and when a negative voltage is applied to the gate, the current is decreased.

The IXTC130 N15T has a minimum gate-source voltage (Vgs) of ±10V, which allows it to be used in many industrial applications. It also has a minimum drain-source voltage (Vds) of 300V, which provides excellent protection against short circuits and voltage spikes. Additionally, it also has a maximum power dissipation of 150W, which makes it suitable to be used in high power-switching applications. It also has a maximum on-state resistance of 1.64ohms, which enables low voltage drop and low gate charge.

In conclusion, IXTC130N15T is a type of single MOSFET that is specifically designed for high power load applications. It offers excellent reliability, fast switching speeds and can handle high power loads. It has various applications in motor control, power factor correction, UPS systems, switching power supplies, choppers, DC-DC converters, radio frequency communication systems, home and office automation applications, and automotive solutions. Its working principle is based on the ability to modulate the drain-source current by the applied voltage to the input gate.

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