IXTC200N10T

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	ISOPLUS220™
Supplier Device Package:	ISOPLUS220™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	160W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9400pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	152nC @ 10V
Series:	TrenchMV™
Rds On (Max) @ Id, Vgs:	6.3 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	101A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXTP200N10T Application Field and Working Principle

IXTP200N10T is a trench-gate field-effect transistor (FET) with a very wide application field. It is a single N-channel, field-effect transistor (FET) device developed and manufactured by IXYS Corporation and is used mainly in applications such as power management, motor control and sound reproduction.IXTP200N10T is widely used in the industrial industry. It has excellent reliability, fast operation, high power efficiency, low power consumption and high current carrying capability. It is also widely used in the mobile telecommunication, consumer electronics and home appliance industry.The IXTP200N10T FET can be used in both high and low power applications. In high power applications, it can be used to control the voltage applied to a device. For example, it can be used to control the voltage applied to a motor or drive. In low power applications, it can be used to control the flow of current. For example, it can be used in sound reproduction applications such as amplifiers and speakers to control the amount of current flowing through the speaker.The IXTP200N10T FET operates differently from a regular FET, which is essentially a three terminal device. The IXTP200N10T FET has four terminal connections and can be used to control the voltage applied to a device or to control the current that flows through a device. It also has a low output impedance, high input impedance and high frequency response.The IXTP200N10T FET is a depletion mode FET which means that the device requires a positive voltage to turn it on. When the voltage is applied, the gates of the device are opened and current is allowed to flow through the device. When the voltage is removed, the gates of the device close and the current flow is cut off. This makes the device suitable for applications where power control is essential.The IXTP200N10T FET can also be used in many applications as a logic switch. When the voltage is applied to the device, the gates of the device open and the current flows, which can be used to control the logic state of the system. This makes the device ideal for use in low power circuits where precise control of the logic state is required.The working principle of the IXTP200N10T FET is based on the principle of the FET which is the simplest form of a semiconductor device. FETs are typically composed of a gate, drain, and source. The gate is the control element of the device, and it is responsible for controlling the flow of current. The drain and source are the two electrodes responsible for carrying the current from one end to the other. The voltage applied to the gate causes a charge imbalance between the two electrodes, which in turn allows or prevents current to flow through the device.In conclusion, the IXTP200N10T FET is a widely-used FET device which has a wide range of applications. It is a single N-channel, field-effect transistor (FET) device developed and manufactured by IXYS Corporation, making it suitable for use in industrial, consumer electronics and home appliances applications. It has excellent reliability, fast operation, high power efficiency, low power consumption, and high current carrying capability. Additionally, it is a depletion-mode field-effect transistor which requires a positive voltage to turn it on, making it suitable for power control applications. The IXTP200N10T FET is also suitable for use as a logic switch due to its precise control of logic state.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description