IXTC250N075T

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IXTN250N075T is an advanced insulated-gate field effect transistor (IGFET) that has a wide range of uses in many consumer and industrial applications. The device is designed to operate with a drain current up to 25A and withstand a maximum channel temperature of 150°C. It is also rated for a larger maximum allowable drain-to-source voltage (VDS) compared to similarly rated lateral MOSFETs.

Its output capability and low on-state resistance make it particularly suitable for high voltage applications. It is also a suitable alternative to older, bipolar and lateral MOSFETs when low on-state resistance and output capability are required. Its low turn-on threshold voltage benefits those applications that have narrow gate-source voltage range feeding the device.

One of the key features of IXTN250N075T is its dynamic behavior when it is supplied with input voltage. It has a built-in cascode structure that ensures excellent low-side-driver performance. This structure is also known as enhancement-mode cascode optimization or EMO. It improves the device’s switching performance, reduces tail current, and improves sleep-mode VGS, which helps keep the total power consumption low.

Another noteworthy feature of IXTN250N075T is its low-dissipation package design. Its low-profile QFN package with heat-dissipation pad helps keep the package temperature low, yielding better performance, improved reliability, and lower cost.

IXTN250N075T also has an important feature known as “wide-body capability”. This refers to its ability to withstand high drive current when it is operating at very low voltage. Thanks to this feature, IXTN250N075T can be used in applications ranging from low-power consumer electronics to high-power industrial applications.

The working principle of IXTN250N075T revolves around the modulation of electric current through a insulated sensor. A gate voltage is applied to the insulated gate, which modulates the electric current passing through the drain and source. The amount of current can be controlled by adjusting the gate voltage, enabling the user to adjust the output of the device.

IXTN250N075T is a versatile, efficient, and reliable device. Its wide range of features makes it suitable for a wide range of applications, ranging from consumer electronics to high-power industrial applications. Its low-dissipation package design helps keep its package temperature low, yielding better performance and improved reliability. Thanks to its low turn-on threshold voltage and EMO enhancement-mode cascode optimization, it offers improved switching performance and low total power consumption.

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