Allicdata Part #: | IXTR102N65X2-ND |
Manufacturer Part#: |
IXTR102N65X2 |
Price: | $ 10.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 650V 54A ISOPLUS247 |
More Detail: | N-Channel 650V 54A (Tc) 330W (Tc) Through Hole ISO... |
DataSheet: | IXTR102N65X2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 9.11421 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | ISOPLUS247™ |
Supplier Device Package: | ISOPLUS247™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 330W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10900pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 152nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 51A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTR102N65X2 is a N-Channel Power MOSFET transistor by Infineon Technologies. It has a drain-source voltage of 650V and a drain current of 102A. This MOSFET is used mainly in applications where high current and low gate drive is needed. The main applications of this MOSFET are for switch mode power supplies, motor control, DC-DC converters, and automotive power inverters.
This MOSFET works on the principle of insulated gate bipolar transistor (IGBT) technology. It is a semiconductor device that has three terminals, the source, the drain, and the gate. The source is connected to the negative side of the supply voltage, the drain is connected to the positive side of the supply voltage, and the gate is connected to the control voltage.
The triggering of this MOSFET is done in two ways: P-channel and N-channel. In P-channel MOSFET, the gate is connected to a positive voltage which attracts electrons from the negatively charged source and helps to develop more positive voltage between the drain and the source. In N-channel MOSFET, the gate is connected to a negative voltage which attracts the positively charged electrons from the positively charged source and helps to develop more negative voltage between the drain and the source.
The IXTR102N65X2 is a N-Channel Power MOSFET featuring low on-state resistance and low gate threshold voltage making it ideal for high current and low gate drive requirements. Its high current handling capabilities combined with fast switching speeds and the ability to withstand high temperatures make the IXTR102N65X2 ideal for high-power switching applications. Its ability to minimize switching losses makes it suitable for high frequency applications such as switch mode power supplies and inverters.
To ensure optimum performance in high-power applications, the IXTR102N65X2 should be coupled with a suitable thermal management system. It features an overload protection that prevents current flow if the transistor is overstressed. Additionally, the IXTR102N65X2 has an integrated dV/dt protection that prevents voltage spikes from traveling through the power switch.
In summary, IXTR102N65X2 is a N-Channel Power MOSFET transistor from Infineon Technologies. It features low on-state resistance, fast switching speeds, and overload and dV/dt protection. It is used mainly in applications where high current and low gate drive is needed such as switch mode power supplies, motor control, DC-DC converters, and automotive power inverters.
The specific data is subject to PDF, and the above content is for reference
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