IXTR30N25

IXTR30N25 is a depletion-mode MOSFET integrated circuit from IXYS Corporation. It is a simplified version of the extremly long n-channel depletion-mode MOSFETs found in the IXTR20N25 and the IXTR22N25. The IXTR30N25 has a dielectric thickness of 3nm, which is about half that of the standard FETs, and a gate oxide thickness of 1.5um (compared to normal thickness of 1um). The IXTR30N25 offers an improved performance in terms of power efficiency and noise levels, as well as better thermal stability.

The IXTR30N25 can be used to switch high current in a wide variety of applications, including power supplies, converters, motor controllers and other high current switching applications. It can be used in the power stages of industrial machinery, automotive and medical electronics, as well as avionics, defence and aerospace applications. The IXTR30N25 is available in various package sizes, from DIP to surface mount.

The IXTR30N25 has a large gate-drain breakdown voltage of >450V, making it suitable for higher-voltage applications. It also offers superior ESD protection, with its dynamic drain-drain breakdown voltage of 500V per micron of oxide thickness.

The IXTR30N25 is built around the same structure as standard FETs but has a larger gate oxide thickness and a smaller dielectric thickness. The result of this is that it requires less drive current to switch on, resulting in lower losses and improved efficiency. Additionally, the thicker gate oxide also leads to improved noise immunity. As the IXTR30N25 is a depleted-mode MOSFET, it operates in the linear region of operation, allowing for good linearity and control in applications.

The IXTR30N25 also benefits from strong body-drain short channel immunity, providing better performance in pulse-width modulation applications and in applications that require multiple on-off transitions. This effect is further amplified by the wide range of temperature range, from -55°C to +175°C.

To summarise, the IXTR30N25 is a high-performance depletion-mode MOSFET that offers superior power efficiency, noise levels and thermal stability. By combining a larger gate oxide thickness, smaller dielectric thickness and improved body-drain short channel immunity, the IXTR30N25 provides excellent performance in both linear and switching applications. It can be used in a variety of high-voltage and high-current applications, and is available in various package sizes.