Allicdata Part #: | IXTR170P10P-ND |
Manufacturer Part#: |
IXTR170P10P |
Price: | $ 13.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 100V 108A ISOPLUS247 |
More Detail: | P-Channel 100V 108A (Tc) 312W (Tc) Through Hole IS... |
DataSheet: | IXTR170P10P Datasheet/PDF |
Quantity: | 147 |
1 +: | $ 12.32280 |
30 +: | $ 10.36080 |
120 +: | $ 9.52070 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | ISOPLUS247™ |
Supplier Device Package: | ISOPLUS247™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 312W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
Series: | PolarP™ |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 85A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 108A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTR170P10P is a single-channel MOSFET. It offers fast switching speeds, excellent thermal performance, and high power efficiency. It’s a switching device ideal for a wide variety of applications such as power supply, electronic power control, and motor control systems.
First, let’s look at the IXTR170P10P application field. This MOSFET is specifically designed for use in high-performance power converters, DC/DC and AC/DC applications. It can also be used in power regulated applications, like switching power amplifiers for audio and video, mobile and industrial equipment, along with battery discharge and battery control, and many others.
The IXTR170P10P MOSFET is designed to deliver the maximum performance from a single-channel source. It offers a maximum on-state current of 340 mA and a maximum drain-source voltage of 100 V. It also possesses excellent thermal performance, a fast switching speed of 10 ns, and a low gate charge of just 70 nC. These features make it suitable for high-speed and high-power switching applications.
Now let’s look at the IXTR170P10P working principle. This MOSFET is controlled by a voltage source, which acts as its gate. When a positive voltage is applied to the gate, the MOSFET conducts current from its drain to its source. A certain voltage and current is required to switch the MOSFET on and off. When the MOSFET is on, the current flows from the drain to the source and when it is off, the current stops flowing.
When a voltage over a certain threshold is applied to the gate, the MOSFET becomes conductive, allowing the gate current to flow from the source to the drain. That generates a magnetic field, which starts to pull the electrons from the N-doped region (source) to the P- doped direction (drain). As the electrons start to move, they create a flowing current between the source and the drain. This process of movement of electrons between the source and the drain is known as the ‘channel’.
The amount of current flowing through the MOSFET is dependent on the gate voltage. The higher the voltage, the higher the current. When the voltage is removed, the MOSFET goes back to its "off" state, which means no current is able to flow through it.
The IXTR170P10P MOSFET is designed for high-efficiency, high-performance switching applications. Its fast switching speeds, excellent thermal performance, and high power efficiency make it an ideal choice for many high-speed and high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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