IXTR90P10P Allicdata Electronics
Allicdata Part #:

IXTR90P10P-ND

Manufacturer Part#:

IXTR90P10P

Price: $ 7.23
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 100V 57A ISOPLUS247
More Detail: P-Channel 100V 57A (Tc) 190W (Tc) Through Hole ISO...
DataSheet: IXTR90P10P datasheetIXTR90P10P Datasheet/PDF
Quantity: 1000
30 +: $ 6.50538
Stock 1000Can Ship Immediately
$ 7.23
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Series: PolarP™
Rds On (Max) @ Id, Vgs: 27 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTR90P10P Application Field and Working Principle

IXTR90P10P is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) that is usually used as an alternative to other power transistors such as bipolar junction transistors (BJTs). This particular type of MOSFET is a “normal level” device, meaning that it has a fairly linear characteristic in its electrical behaviour. IXTR90P10P offers certain advantages over BJTs, such as higher current rating and faster switching speeds. The device also has lower power dissipation and lower input and output capacitance than BJTs.

The IXTR90P10P is suitable for operation in a wide variety of applications. Due to its design as a MOSFET, it can handle large amounts of current, making it an ideal choice for applications such as power regulation and motor control. It can also be used for various switching applications, such as alarms and security systems, as it has very low on-resistance and steep transition edges. Furthermore, its design makes it suitable for low-noise applications, as it has a very low noise level.

Working Principle

At its most basic level, the IXTR90P10P works by separating the n-type and p-type semiconductors by an insulating layer known as the gate oxide film. When a voltage is applied to the gate, it generates an electric field that “opens” the channel between the two types of semiconductors, allowing electrons to pass through the channel and thus allowing current to flow. This principle forms the basis of MOSFET operation.The IXTR90P10P is an enhancement type of MOSFET, meaning that its gate voltage must be greater than that of the drain voltage for it to operate. In other words, the transistor must be overdriven in order for it to conduct current. This provides good performance characteristics for the IXTR90P10P, as it allows it to switch as fast as possible and with minimal power dissipation.

Conclusion

The IXTR90P10P is a high-performance normal level MOSFET suitable for a wide range of applications. It has a low on-resistance and steep transition edges, making it an ideal choice for power regulation and motor control. Furthermore, the IXTR90P10P has a low noise level and low input and output capacitance which makes it suitable for low-noise applications. The device works by using an electric field generated by the application of a voltage to its gate to control its operations.

The specific data is subject to PDF, and the above content is for reference

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