IXTR40P50P Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXTR40P50P Application Field and Working Principle
The IXTR40P50P is a type of field effect transistor (FET) specifically designed for a broad range of high-density power applications. It combines low on-state resistance and extremely low gate charge with an excellent avalanche current and rugged source to source short voltage protection. This makes it a great choice for electronic devices with power density requirements. The IXTR40P50P is suitable for industrial, automotive, medical and consumer electrical applications.

The IXTR40P50P is a vertical MOSFET that offers an extended breakdown voltage of up to 40V and a high output current of up to 50A. Its on-state resistance (RDS(on)) is only 2.15 mΩ at 10V and 4.8 mΩ at 8V, meaning that it can be used to reduce switching losses and improve efficiency. Additionally, its low gate charge (Qg) of 0.67 nC reduces the gate drive power required and increases switch turn-off speed. This FET also has an avalanche ruggedness rating of 75V, so it can handle large transient voltages during its operation.

The IXTR40P50P utilizes a unique MOSFET structure to achieve its excellent performance characteristics. It consists of an N-type source junction and a P-type gate junction, separated by a thin layer of insulation. The gate junction is connected to the drain terminal, and its voltage causes the channel to conduct current. This current is modulated by the voltage at the gate terminal, allowing the IXTR40P50P to be used as a variable resistor. By changing the voltage at the gate terminal, the channel width and on-state resistance can be controlled, allowing for precise control over current flow. This makes the IXTR40P50P ideal for use in power control circuits.

The IXTR40P50P also features an integrated Zener diode which provides overvoltage protection from 16-19V. This increases the device\'s reliability and helps to protect the circuits that employ it. Additionally, its integrated source to source short voltage protection helps to protect the enclosed components from overvoltage during a short circuit event. This makes the IXTR40P50P an excellent choice for a wide range of industrial, automotive, medical and consumer electronic applications.

In summary, the IXTR40P50P is a excellent high-density power FET which is suitable for a broad range of applications. It offers low on-state resistance, low gate charge and excellent avalanche current and voltage protection. It also features an integrated Zener diode for increased device reliability, and an integrated source to source short voltage protection for increased circuit protection. These features make it an ideal choice for use in industrial, automotive, medical and consumer electrical applications.

The specific data is subject to PDF, and the above content is for reference