Allicdata Part #: | IXTR210P10T-ND |
Manufacturer Part#: |
IXTR210P10T |
Price: | $ 15.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 100V 158A ISOPLUS247 |
More Detail: | P-Channel 100V 195A (Tc) 595W (Tc) Through Hole IS... |
DataSheet: | IXTR210P10T Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 14.12710 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | ISOPLUS247™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 595W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 69500pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 740nC @ 10V |
Series: | TrenchP™ |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 105A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTR210P10T is an advanced field-effect transistor (FET) designed for simple and efficient power applications. As a single-gate MOSFET, it has a relatively low gate voltage requirement, making it a very efficient power device. Its features make it suitable for a wide range of applications, including power conversion, LED lighting, and automotive power management.
The IXTR210P10T is a high-performance device that offers the user reliable, cost-effective and efficient power delivery. It features a 50V drain-source voltage rating, a low on-resistance of 0.7 ohms, and a maximum current rating of 10 amps. The device is capable of operating at higher frequencies than other FETs, allowing it to be used in applications where higher switching speeds are required. Furthermore, the IXTR210P10T has a low gate-source capacitance, which enables the device to run with low switching losses, resulting in higher power efficiency. Additionally, the device can be used in high frequency applications. The IXTR210P10T\'s single-gate configuration allows for voltage level shifting and other advantages in applications where low gate voltage and low input current are required.
The IXTR210P10T works by blocking the electric current between its source and drain terminals when the voltage at the gate is at a minimum. When the gate voltage is increased above the threshold voltage, a current is allowed to flow between the source and drain, allowing the device to be used as an analog switch. When the voltage across the source and drain is greater than the gate saturation voltage, the device is fully saturated, allowing maximum current flow.
The IXTR210P10T is well-suited for a broad range of power applications due to its low gate voltage and fast switching capability. It is an ideal solution for power conversion, LED lighting, and automotive power management applications that require fast switching speeds and are operating in medium to high frequencies. Additionally, it is available in a tiny 4-pin package, making it an excellent choice for space-constrained applications.
In summary, the IXTR210P10T is a single gate MOSFET transistor with a low gate voltage requirement and fast switching speed. It is suitable for a wide range of applications, including power conversion, LED lighting, and automotive power management, due to its high efficiency, low on-resistance, and cost-effective design. The device is also available in a 4-pin package, making it an ideal choice for applications where space is a constraint. Its features make it a reliable and efficient solution for power applications.
The specific data is subject to PDF, and the above content is for reference
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