IXTR200N10P Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTR200N10P is a Power MOSFET transistor. It is part of a family of power metal oxide silicon field effect transistors (power MOSFETs), which are designed to provide maximum power capability in a small outline package. The IXTR200N10P has very low on-state resistance and very high switching speed, making it well suited for applications requiring power and speed, such as motor control and switching circuits.The IXTR200N10P is a single N-channel power MOSFET transistor. It is designed for two-level switching applications and has an Avalanche rating of 190 volts. Its maximum Drain–Source voltage is 200V, and its maximum continuous Drain current (D-S on) is 10 A. The IXTR200N10P also has a low maximum Gate–Source threshold voltage of 5 V, making it suitable for low voltage applications.The IXTR200N10P has a fast switching speed, allowing it to switch with very low power losses. Its RDSon (on-state resistance) is less than 0.05Ω, which is significantly lower than other transistors in its category. This gives the IXTR200N10P the ability to switch at high speeds while providing minimal power losses.The IXTR200N10P has a very low output capacitance (almost 10x lower than other similar devices) which helps reduce the switching noise caused by switching electrical loads. It also has an integrated ESD protection, clamps the Gate–Source voltage to prevent damage caused by electro-static discharge. This ensures the durability of the transistor.The IXTR200N10P is suitable for a variety of applications, including motor control, switching circuits, and drivers in communications equipment. It can also be used in applications that require low noise and low power losses, such as in power supplies.The IXTR200N10P works by using the Gate–Source voltage to control the Drain current. When the Gate voltage is raised, electrons flow from the Source to the Drain and the current (I D ) increases, increasing the voltage drop across the MOSFET. When the Gate voltage is lowered, the current decreases, and the voltage drop across the MOSFET reduces, causing the switch to be turned off.The IXTR200N10P is a high-performance MOSFET transistor which provides both high speed and power for a variety of applications. It has a low output capacitance and integrated ESD protection, giving it the ability to switch with minimal power losses. The IXTR200N10P is well suited for applications requiring both speed and power, such as motor control, switching circuits, and drivers in communications equipment.

The specific data is subject to PDF, and the above content is for reference